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NOIV1SN012KA-GDI

Onsemi

NOIV1SN012KA-GDI by Onsemi

NOIV1SN012KA-GDI by Onsemi is a CMOS image sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for high-speed imaging applications requiring precise color reproduction and low light sensitivity.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 1,598 parts In-Stock

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Digiode

USA . 1,370 parts In-Stock

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Kulean Microsystems

USA . 8,390 parts In-Stock

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Problanco Electronics

Mexico . 7,402 parts In-Stock

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TANS Electronics

Latvia . 5,972 parts In-Stock

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Corphita

USA . 2,468 parts In-Stock

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SupplyDigital Components

Austria . 2,033 parts In-Stock

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UHIMA Technologies

Türkiye . 957 parts In-Stock

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Corohmni

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Overview

Discover the power of cutting-edge imaging technology with the NOIV1SN012KA-GDI by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior quality image sensors that redefine the possibilities of visual data capture. Ideal for a wide range of applications, this innovative sensor offers unmatched precision and clarity to elevate your projects to new heights. Unlock the potential of your vision with the NOIV1SN012KA-GDI and experience the difference that top-tier technology can make.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size offers high resolution images with sharp details.

Maximum Supply Voltage: 2 V

Allows for stable and efficient power supply operation.

Master Clock: 340 MHz

High clock frequency enables fast data processing and transmission.

Body Width: 36.1 inch

Compact body width for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high sensitivity.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient utilization of space in devices.

Minimum Supply Voltage: 1.6 V

Provides flexibility in power supply options while maintaining performance.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 4096

High horizontal pixel count for detailed and high-resolution images.

Output Type: CURRENT OUTPUT

Current output type for accurate signal transmission and processing.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold temperatures without performance loss.

Maximum Operating Current: 915 mA

Supports high operating current for demanding applications.

Housing: CERAMIC

Durable ceramic housing for protection and longevity of the sensor.

Dynamic Range: 56 dB

Wide dynamic range for capturing details in both bright and dark areas of an image.

Vertical Pixel: 3072

High vertical pixel count for clear and detailed images.

Body Length/Diameter: 43.1 mm

Optimal size for easy installation and integration in devices.

Spectral Response (nm): 400-1000

Wide spectral response range for capturing a variety of wavelengths.

Optical Format (inch): 4/3

Standard optical format suitable for various imaging applications.

Termination Type: SOLDER

Solder termination type for secure and reliable connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for convenient communication with other devices.

Frame Rate: 110 fps

High frame rate for capturing fast-moving objects with clarity.

Array Type: FRAME

Frame array type for organized and efficient image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature for secure and stable installation.

Technical Specifications

Image Sensors NOIV1SN012KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

110 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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