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KAI-47051-QXA-JD-AE

Onsemi

KAI-47051-QXA-JD-AE by Onsemi

KAI-47051-QXA-JD-AE by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 66 dB dynamic range. Ideal for applications requiring high-resolution imaging such as industrial machine vision systems or scientific cameras due to its 8856 (H) x 5280 (V) pixel array and INTERLINE design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,500 parts In-Stock

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1,500

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Digiode

USA . 1,080 parts In-Stock

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1,080

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,700 parts In-Stock

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7,700

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Kulean Microsystems

USA . 6,461 parts In-Stock

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6,461

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TANS Electronics

Latvia . 1,479 parts In-Stock

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1,479

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Problanco Electronics

Mexico . 1,189 parts In-Stock

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1,189

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Corphita

USA . 802 parts In-Stock

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802

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UHIMA Technologies

Türkiye . 357 parts In-Stock

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357

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Corohmni

South Africa . 282 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the KAI-47051-QXA-JD-AE by Onsemi. As a leader in image sensor manufacturing, Onsemi delivers top-notch quality and reliability with this product. Ideal for a wide range of applications, this image sensor offers unparalleled performance and precision. From capturing stunning visuals to ensuring accurate data collection, the KAI-47051-QXA-JD-AE is a game-changer in the industry. Experience the value and benefits of this innovative product and take your projects to new heights with Onsemi's superior technology.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

Small pixel size allows for high resolution images to be captured, making this image sensor ideal for applications requiring detailed images.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and allows for reliable operation under varying voltage conditions.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing, making this image sensor suitable for applications requiring high-speed image capture.

Body Width: 44.55 inch

Compact body width allows for easy integration into various devices and systems without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors offer high-quality image capture with low noise, making this image sensor a good choice for applications where image clarity is important.

Minimum Operating Temperature: -50 °C

Wide operating temperature range allows for use in extreme environments, making this image sensor suitable for outdoor or industrial applications.

Dynamic Range: 66 dB

High dynamic range allows the sensor to capture both bright and dark areas in a scene with detail, making it suitable for applications with high contrast scenes.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and reliable mounting option, making installation of this image sensor easy and robust.

Technical Specifications

Image Sensors KAI-47051-QXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.55 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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