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KAI-11002-ABA-CP-B1

Onsemi

KAI-11002-ABA-CP-B1 by Onsemi

KAI-11002-ABA-CP-B1 by Onsemi is an image sensor with 9x9 um pixel size, 4008 horizontal pixels, and 2672 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

$37,690.940

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3 parts In-Stock

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$37,690.940

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Verical

USA . 3 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,849 parts In-Stock

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$35,806.393

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Vyrian

USA . 7,644 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 446 parts In-Stock

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$20.580

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Corphita

USA . 536 parts In-Stock

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$33,921.846

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536

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Corohmni

South Africa . 124 parts In-Stock

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TANS Electronics

Latvia . 5,176 parts In-Stock

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Problanco Electronics

Mexico . 2,802 parts In-Stock

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Kulean Microsystems

USA . 927 parts In-Stock

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SupplyDigital Components

Austria . 354 parts In-Stock

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UHIMA Technologies

Türkiye . 82 parts In-Stock

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Overview

Discover the unparalleled quality and precision of the KAI-11002-ABA-CP-B1 image sensor by Onsemi. With a wide range of applications in industries such as automotive, security, and medical imaging, this cutting-edge product offers exceptional value and performance. Designed with advanced technology and superior manufacturing techniques, Onsemi continues to set the standard for excellence in the field of image sensors. Experience the benefits of crystal-clear images, high sensitivity, and reliable operation that the KAI-11002-ABA-CP-B1 brings to your projects. Unlock new possibilities and elevate your creations with this top-of-the-line sensor.

Feature Benefit Bullets

Pixel Size (um): 9X9

The small pixel size allows for high resolution images to be captured with detailed clarity.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for efficient operation and better performance of the image sensor.

Body Width: 32.89 inch

The compact body width makes it easy to integrate this image sensor into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being an image sensor of CCD type ensures high quality and accurate image capture for diverse applications.

Body Height: 5.97 mm

The slim body height makes this image sensor suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

The rectangular package shape ensures easy fitting and compatibility with different mounting setups.

Minimum Supply Voltage: 14.5 V

Having a low minimum supply voltage ensures energy-efficient operation of the image sensor.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand challenging environmental conditions.

Horizontal Pixel: 4008

High horizontal pixel count allows for wide image capture and detailed resolution.

Minimum Operating Temperature: -50 °C

With a low minimum operating temperature, this sensor can perform reliably in cold environments.

Housing: CERAMIC

Ceramic housing provides durability and protection for the image sensor in various operating conditions.

Dynamic Range: 66 dB

A wide dynamic range allows the sensor to capture images with both bright and dark areas accurately.

Vertical Pixel: 2672

High vertical pixel count ensures detailed image capture along the vertical axis.

Body Length/Diameter: 44.45 mm

The compact body length/diameter makes this image sensor suitable for space-constrained applications.

Data Rate: 28 Mbps

High data rate enables fast and efficient transfer of image data for real-time applications.

Termination Type: SOLDER

Solder termination ensures reliable connections for the image sensor in various setups.

Array Type: INTERLINE

Interline array type allows for fast readout of image data, suitable for high-speed imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation of the image sensor on circuit boards.

Technical Specifications

Image Sensors KAI-11002-ABA-CP-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 13 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

32.89 inch

Body Height:

5.97 mm

Body Length/Diameter:

44.45 mm

Data Rate:

28 Mbps

Dynamic Range:

66 dB

Horizontal Pixel:

4008

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2672

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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