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KAI-04050-CBA-JD-BA

Onsemi

KAI-04050-CBA-JD-BA by Onsemi

KAI-04050-CBA-JD-BA by Onsemi is an image sensor with 5.5x5.5um pixel size, 2336 horizontal pixels, and 1752 vertical pixels. It operates at temperatures from -50 to 70 °C and has a dynamic range of 64 dB. Ideal for applications requiring high-quality imaging in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 795 parts In-Stock

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795

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Vyrian

USA . 335 parts In-Stock

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335

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Distributors (Availability)

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Kulean Microsystems

USA . 5,813 parts In-Stock

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5,813

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SupplyDigital Components

Austria . 5,552 parts In-Stock

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5,552

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Problanco Electronics

Mexico . 5,158 parts In-Stock

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5,158

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Corphita

USA . 1,526 parts In-Stock

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TANS Electronics

Latvia . 1,268 parts In-Stock

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1,268

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UHIMA Technologies

Türkiye . 339 parts In-Stock

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339

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Corohmni

South Africa . 267 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the KAI-04050-CBA-JD-BA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality image sensors that are perfect for a wide range of applications. Whether you're in the medical field, security industry, or robotics sector, this image sensor offers unmatched value and benefits. Say goodbye to blurry images and hello to sharp, detailed visuals with the KAI-04050-CBA-JD-BA - your go-to solution for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for detailed and high-resolution images to be captured, making this sensor a great choice for applications where image quality is crucial.

Power Supplies (V): 15

The low power supply requirement of 15V makes this sensor energy-efficient and suitable for use in portable or battery-powered devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD technology in this image sensor ensures high-quality image capture with low noise levels, making it ideal for applications where image clarity is important.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration and placement within devices, making this sensor convenient to use in various applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this sensor can withstand high temperatures, making it suitable for use in environments where heat may be a concern.

Horizontal Pixel: 2336

The high number of horizontal pixels allows for detailed and wide-angle image capture, making this sensor ideal for applications requiring high-resolution images.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C ensures that this sensor can function even in extremely cold environments, making it versatile for use in various conditions.

Dynamic Range: 64 dB

With a dynamic range of 64 dB, this sensor can capture images with a wide range of light intensities, making it suitable for applications with varying lighting conditions.

Vertical Pixel: 1752

The high number of vertical pixels allows for detailed and high-resolution image capture, making this sensor a great choice for applications where vertical image quality is important.

Termination Type: SOLDER

The solder termination type ensures easy and secure connections, making installation and integration of this sensor hassle-free.

Array Type: INTERLINE

The interline array type allows for fast image readout and reduced blooming effect, making this sensor suitable for applications requiring quick image capture with minimal distortion.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature facilitates secure and stable installation of the sensor, ensuring reliable performance in various applications.

Technical Specifications

Image Sensors KAI-04050-CBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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