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KAI-2020M

Onsemi

KAI-2020M by Onsemi

KAI-2020M by Onsemi is an image sensor with 7.4X7.4 um pixel size, 40 MHz master clock, and 1600 horizontal pixels. Ideal for applications requiring high-quality imaging such as industrial machine vision systems or medical imaging devices due to its 68 dB dynamic range and 35 fps frame rate.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,461 parts In-Stock

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Vyrian

USA . 760 parts In-Stock

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760

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ACDS - Activité Composants Distribution Service

France . 29 parts In-Stock

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SupplyDigital Components

Austria . 7,597 parts In-Stock

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Kulean Microsystems

USA . 6,836 parts In-Stock

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TANS Electronics

Latvia . 6,252 parts In-Stock

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Corphita

USA . 2,224 parts In-Stock

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Problanco Electronics

Mexico . 1,261 parts In-Stock

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UHIMA Technologies

Türkiye . 214 parts In-Stock

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Corohmni

South Africa . 172 parts In-Stock

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Perfect Parts

USA . 65 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 29 parts In-Stock

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Overview

Discover the cutting-edge KAI-2020M Image Sensor by Onsemi, designed with precision and quality in mind. Perfect for a wide range of applications, this sensor offers unmatched clarity and detail, making it ideal for industries such as surveillance, medical imaging, and scientific research. With a sleek rectangular design and advanced features like a 40 MHz master clock and 68 dB dynamic range, this sensor provides unbeatable value and performance to customers looking to elevate their imaging capabilities. Experience the difference with the KAI-2020M - where innovation meets excellence.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution images to be captured, resulting in clear and detailed pictures.

Maximum Supply Voltage: 15.5 V

Higher supply voltage allows for efficient power handling and performance of the image sensor.

Master Clock: 40 MHz

High master clock frequency enables fast data processing and image capture speed.

Body Width: 20.7 inch

Wide body width provides stability and durability to the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD technology ensures high-quality image capture and accurate color representation.

Body Height: 3.17 mm

Low body height allows for compact and slim design of the image sensor.

Package Shape or Style: RECTANGULAR

Rectangular shape offers easy integration and compatibility with various devices and mounting options.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage ensures energy efficiency and cost-effective operation of the image sensor.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance in various environmental conditions.

Horizontal Pixel: 1600

High horizontal pixel count results in wide image coverage and detailed image capture.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures the image sensor can withstand extreme cold conditions.

Maximum Operating Current: 1 mA

Low maximum operating current minimizes power consumption and heat generation.

Housing: CERAMIC

Ceramic housing provides durability and protection to the internal components of the image sensor.

Dynamic Range: 68 dB

High dynamic range allows for capturing both bright and dark areas in the same image with detail.

Vertical Pixel: 1200

High vertical pixel count enables detailed and accurate image capture in vertical direction.

Body Length/Diameter: 33.02 mm

Optimal body length/diameter ratio for easy integration and installation of the image sensor.

Termination Type: SOLDER

Solder termination type ensures secure and reliable connection for long-term use.

Frame Rate: 35 fps

High frame rate allows for smooth and real-time image capture and processing.

Array Type: INTERLINE

Interline array type enables fast readout of image data for quick imaging and data transfer.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides secure and stable installation of the image sensor onto circuit boards or other devices.

Technical Specifications

Image Sensors KAI-2020M attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELCTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

20.7 inch

Body Height:

3.17 mm

Body Length/Diameter:

33.02 mm

Dynamic Range:

68 dB

Frame Rate:

35 fps

Horizontal Pixel:

1600

Housing:

CERAMIC

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

1 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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