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AR0330SR1C00SUKA0-CP

Onsemi

AR0330SR1C00SUKA0-CP by Onsemi

The Onsemi AR0330SR1C00SUKA0-CP is a 2.2x2.2 um CMOS image sensor with 2304 horizontal pixels and 1536 vertical pixels. It operates b/w -30 to 70 °C, has a dynamic range of 69.5 dB, and outputs digital voltage from 0.40-1.40V. Ideal for applications requiring high-resolution imaging in varying light conditions such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

USA . 2,317 parts In-Stock

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Native Components

USA . 593 parts In-Stock

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AZTECH Wire

Italy . 107 parts In-Stock

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SupplyDigital Components

Austria . 7,665 parts In-Stock

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Kulean Microsystems

USA . 3,968 parts In-Stock

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TANS Electronics

Latvia . 1,864 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,124 parts In-Stock

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Northwest PG Solutions

USA . 834 parts In-Stock

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Corohmni

South Africa . 274 parts In-Stock

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UHIMA Technologies

Türkiye . 246 parts In-Stock

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Overview

Capture the world in stunning detail with the AR0330SR1C00SUKA0-CP image sensor by Onsemi. Known for their top-notch quality and cutting-edge technology, Onsemi delivers superior performance in every product they create. This image sensor is perfect for a wide range of applications, from security cameras to industrial machinery, offering exceptional value with its high-resolution images and advanced features. Trust Onsemi to provide you with the best in imaging technology, and experience the difference in quality that sets this sensor apart from the rest.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

A small pixel size allows for higher resolution images to be captured, making this image sensor suitable for applications where detail is important.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and heat generation, making this image sensor energy-efficient.

Master Clock: 27 MHz

A high master clock frequency allows for faster data readout and processing, enabling quick capture of images with minimal lag.

Body Width: 6.278 inch

The compact body width makes it easy to integrate this image sensor into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low noise, high sensitivity, and fast readout speeds, making it a versatile choice for different imaging applications.

Body Height: 0.7 mm

The slim body height allows for a more streamlined design when incorporating this image sensor into a device, contributing to a sleeker overall product.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount and align this image sensor during manufacturing, ensuring accurate placement for optimal performance.

Minimum Supply Voltage: 1.7 V

With a low minimum supply voltage, this image sensor can operate efficiently even in low-power settings, extending its versatility in different usage scenarios.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows this image sensor to be used in a wide range of environmental conditions without compromising performance.

Horizontal Pixel: 2304

The high horizontal pixel count enables detailed and high-resolution images to be captured, making this image sensor suitable for applications that require precision.

Output Range: 0.40-1.40V

The wide output voltage range offers flexibility in signal processing and compatibility with different circuitry, ensuring seamless integration into various systems.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies signal processing and communication with other components, enhancing the overall efficiency of the system.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures that this image sensor can function reliably even in cold environments, making it suitable for a range of applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The choice of terminal finish materials ensures excellent conductivity and corrosion resistance, contributing to the longevity and reliability of the image sensor.

Maximum Operating Current: 75 mA

The low maximum operating current helps in minimizing power consumption, contributing to energy efficiency and prolonged battery life in battery-powered devices.

Dynamic Range: 69.5 dB

A high dynamic range enables this image sensor to capture a wide range of light intensities accurately, making it suitable for applications with varying lighting conditions.

Vertical Pixel: 1536

The vertical pixel count complements the high horizontal pixel count, ensuring that this image sensor can capture detailed images with both depth and width.

Body Length/Diameter: 6.648 mm

The compact body length allows for easy integration and placement of this image sensor in devices, contributing to a more efficient and space-saving design.

Spectral Response (nm): 350-1150

The broad spectral response range allows this image sensor to capture a wide range of colors and wavelengths, making it versatile for various imaging applications.

Optical Format (inch): 1/3

The optical format of 1/3 inch is a standard size in the industry, ensuring compatibility with existing lenses and optical systems, making it easier to integrate this sensor into different setups.

Termination Type: SOLDER

The use of solder termination ensures secure and reliable connections, minimizing the risk of signal loss or disconnection in demanding operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and data transfer between this image sensor and other devices, enhancing the overall interoperability and ease of integration.

Array Type: FRAME

The frame array type offers a structured and organized layout of pixels, improving the sensor's ability to capture images with accuracy and consistency.

Sensitivity (V/lx.s): 2 V/lx.s

With a high sensitivity rating, this image sensor can capture clear and detailed images even in low-light conditions, enhancing its performance in challenging environments.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation and assembly process, making it easier to incorporate this image sensor into various devices or systems.

Technical Specifications

Image Sensors AR0330SR1C00SUKA0-CP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL RESET RELEASE, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.76-2.9V

Array Type:

FRAME

Body Width:

6.278 inch

Body Height:

.7 mm

Body Length/Diameter:

6.648 mm

Dynamic Range:

69.5 dB

Horizontal Pixel:

2304

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

2 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

1536

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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