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AR0330CM1C12SHAA0-DR1

Onsemi

AR0330CM1C12SHAA0-DR1 by Onsemi

Onsemi's AR0330CM1C12SHAA0-DR1 is a 2.2x2.2 um CMOS image sensor with 2304 horizontal pixels and 1536 vertical pixels. It operates at a max supply voltage of 1.9V, has a master clock of 27 MHz, and offers a dynamic range of 69.5 dB. Ideal for applications requiring high-resolution imaging with digital output interface, such as surveillance cameras and industrial machine vision systems.

Median Price

$11.306

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,193 parts In-Stock

1+ parts

-

100+ parts

$7.850

1k+ parts

$7.020

10k+ parts

$6.610

13,193

-

$7.850

$7.020

$6.610

Verical

USA . 13,193 parts In-Stock

1+ parts

-

100+ parts

$14.762

1k+ parts

$13.213

10k+ parts

$12.425

13,193

-

$14.762

$13.213

$12.425

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,136 parts In-Stock

1+ parts

$12.492

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1,136

$12.492

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Vyrian

USA . 6,978 parts In-Stock

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6,978

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,572 parts In-Stock

1+ parts

$11.835

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-

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-

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1,572

$11.835

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-

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Corohmni

South Africa . 217 parts In-Stock

1+ parts

$13.150

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-

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217

$13.150

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AZTECH Wire

Italy . 205 parts In-Stock

1+ parts

$15.980

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205

$15.980

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Native Components

USA . 206 parts In-Stock

1+ parts

$189.740

100+ parts

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$182.150

206

$189.740

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-

$182.150

Northwest PG Solutions

USA . 457 parts In-Stock

1+ parts

$208.713

100+ parts

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457

$208.713

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Continental Prestige Electronics

USA . 13,213 parts In-Stock

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100+ parts

$11.160

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13,213

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$11.160

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TANS Electronics

Latvia . 7,626 parts In-Stock

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7,626

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Kulean Microsystems

USA . 5,868 parts In-Stock

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SupplyDigital Components

Austria . 3,395 parts In-Stock

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3,395

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Problanco Electronics

Mexico . 1,424 parts In-Stock

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1,424

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UHIMA Technologies

Türkiye . 650 parts In-Stock

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650

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Overview

Capture stunning images with the AR0330CM1C12SHAA0-DR1 by Onsemi, a leading manufacturer of high-quality image sensors. This cutting-edge CMOS sensor offers exceptional performance and reliability, making it ideal for a wide range of applications. From security cameras to automotive systems, this sensor delivers crisp, clear images with a wide dynamic range. Experience the value and benefits of Onsemi's superior technology with the AR0330CM1C12SHAA0-DR1.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 1.9 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and efficient operation.

Body Width: 11.43 inch

Compact size for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality.

Body Height: 2.275 mm

Slim profile for versatile mounting options and space-saving design.

Package Shape or Style: SQUARE

Square package shape allows for efficient use of space and easy alignment during installation.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy efficiency and extended battery life.

Maximum Operating Temperature: 70 °C

Wide temperature range for reliable operation in various environments.

Horizontal Pixel: 2304

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.40-1.40V

Wide output voltage range for flexibility in data processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output voltage provides reliable and consistent data transmission.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature for reliable performance even in extreme cold conditions.

Maximum Operating Current: 137 mA

Efficient power usage with relatively low maximum operating current.

Housing: CERAMIC

Ceramic housing provides durability and thermal stability for long-term use.

Dynamic Range: 69.5 dB

High dynamic range for capturing a wide range of light intensities with detail and accuracy.

Vertical Pixel: 1536

High vertical pixel count enhances image quality and detail.

Body Length/Diameter: 11.43 mm

Compact size for easy integration and installation in various devices.

Spectral Response (nm): 350-1150

Wide spectral response range for capturing images in various lighting conditions and environments.

Optical Format (inch): 1/3

Standard optical format for compatibility with a wide range of lenses and imaging systems.

Termination Type: SOLDER

Solder termination for secure and reliable connection during installation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for simple and efficient data communication with other devices or systems.

Frame Rate: 60 fps

High frame rate for capturing smooth and detailed video footage.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Sensitivity (V/lx.s): 2 V/lx.s

High sensitivity for accurate and precise image capture in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure attachment to PCBs or other surfaces.

Technical Specifications

Image Sensors AR0330CM1C12SHAA0-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.7-2.9V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.275 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

69.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

2304

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

137 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

2 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

350-1150

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1536

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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