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NOII4SM6600A-QDC

Onsemi

NOII4SM6600A-QDC by Onsemi

NOII4SM6600A-QDC by Onsemi features a pixel size of 3.5x3.5 um, operates at a max supply voltage of 2.625 V, and has a master clock of 40 MHz. This image sensor is ideal for applications requiring high-resolution imaging with a dynamic range of 59 dB and an output interface type of 3-WIRE INTERFACE.

Median Price

$231.280

Lifecycle Status

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In-Stock Inventory

1k+

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Chip1Stop

Japan . 25 parts In-Stock

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Arrow

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Nova Conductors

Japan . 54 parts In-Stock

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$231.280

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Vyrian

USA . 4,692 parts In-Stock

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Digiode

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Aztec Data Supply Inc.

USA . 162 parts In-Stock

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$2.650

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Ampacity Inc.

Singapore . 23 parts In-Stock

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$6.750

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AZTECH Wire

Italy . 609 parts In-Stock

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$7.859

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$7.859

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Semicontronic

India . 13 parts In-Stock

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$22.750

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$22.181

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$22.068

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$219.114

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Corohmni

South Africa . 185 parts In-Stock

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Continental Prestige Electronics

USA . 4,886 parts In-Stock

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Perfect Parts

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Problanco Electronics

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Lixinc

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Kulean Microsystems

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Argo Parts USA

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Netroflash

USA . 2,000 parts In-Stock

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$219.716

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TANS Electronics

Latvia . 1,762 parts In-Stock

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SupplyDigital Components

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Kepictronics

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UHIMA Technologies

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Corphita

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Overview

Unleash the power of cutting-edge technology with the NOII4SM6600A-QDC by Onsemi, a top-tier manufacturer renowned for its excellence in image sensors. Perfect for a wide range of applications, this sensor boasts high-quality imaging capabilities and unparalleled performance. Elevate your projects with this state-of-the-art device, offering superior value, benefits, and advantages that will exceed your expectations. Trust in Onsemi to deliver innovation and reliability with every product, making the NOII4SM6600A-QDC the ideal choice for all your imaging needs. Unlock endless possibilities and bring your vision to life with this exceptional sensor.

Feature Benefit Bullets

Pixel Size (um): 3.5X3.5

Small pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 2.625 V

Moderate maximum supply voltage ensures safe operation of the sensor.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 24.13 inch

Compact body width allows for easy integration into various devices.

Power Supplies (V): 2.5

Standard power supply voltage ensures compatibility with many systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer high sensitivity and low noise for excellent image quality.

Body Height: 4.048 mm

Low body height allows for a slim design and easier placement in systems.

Package Shape or Style: SQUARE

Square package shape provides efficient use of space and easy mounting.

Minimum Supply Voltage: 2.375 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 65 °C

Wide operating temperature range ensures performance in various environments.

Horizontal Pixel: 2210

High horizontal pixel count allows for detailed and sharp images.

Output Type: ANALOG VOLTAGE

Analog voltage output simplifies integration with analog signal processing circuits.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature enables use in cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance.

Housing: CERAMIC

Ceramic housing offers durability and thermal stability for reliable performance.

Dynamic Range: 59 dB

High dynamic range allows for capturing a wide range of light intensities.

Vertical Pixel: 3002

High vertical pixel count enables capturing of detailed images with good resolution.

Body Length/Diameter: 24.13 mm

Compact body length/diameter for easy integration and space-saving.

Termination Type: SOLDER

Solder termination provides secure electrical connections for reliable operation.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface simplifies connectivity and data transfer to external systems.

Frame Rate: 5 fps

Decent frame rate enables capturing of moving objects with smooth video output.

Array Type: FULL FRAME

Full frame array type ensures efficient use of sensor area for image capture.

Sensitivity (V/lx.s): 4.83 V/lx.s

High sensitivity allows for capturing clear images even in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount design simplifies installation and PCB integration of the sensor.

Technical Specifications

Image Sensors NOII4SM6600A-QDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FULL FRAME

Body Width:

24.13 inch

Body Height:

4.048 mm

Body Length/Diameter:

24.13 mm

Dynamic Range:

59 dB

Frame Rate:

5 fps

Horizontal Pixel:

2210

Housing:

CERAMIC

JESD-609 Code:

e3

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.5X3.5

Power Supplies (V):

2.5

Sensitivity (V/lx.s):

4.83 V/lx.s

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2.625 V

Minimum Supply Voltage:

2.375 V

Terminal Finish:

MATTE TIN

Termination Type:

SOLDER

Vertical Pixel:

3002

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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