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KAE-04471-ABA-SP-EE

Onsemi

KAE-04471-ABA-SP-EE by Onsemi

The Onsemi KAE-04471-ABA-SP-EE is an image sensor with 7.4x7.4 um pixel size, 2096 horizontal and vertical pixels, and a dynamic range of 72 dB. It operates b/w -30 to 40 °C, outputs voltage, and has a data rate of 40 Mbps. Ideal for applications requiring high-quality imaging in various lighting conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,201 parts In-Stock

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Digiode

USA . 1,361 parts In-Stock

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Problanco Electronics

Mexico . 6,325 parts In-Stock

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Kulean Microsystems

USA . 3,112 parts In-Stock

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TANS Electronics

Latvia . 2,300 parts In-Stock

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Corphita

USA . 1,327 parts In-Stock

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SupplyDigital Components

Austria . 1,008 parts In-Stock

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Corohmni

South Africa . 469 parts In-Stock

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UHIMA Technologies

Türkiye . 244 parts In-Stock

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Overview

Capture stunning images with the KAE-04471-ABA-SP-EE image sensor by Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and reliability. This CCD image sensor boasts a wide range of applications in industries such as automotive, security, and medical imaging. With a maximum supply voltage of 15.3V and a dynamic range of 72dB, this sensor offers unparalleled value and benefits to customers seeking top-notch image quality and precision. Upgrade your imaging system with the KAE-04471-ABA-SP-EE and experience the difference today!

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage: 15.3 V

Higher supply voltage allows for better performance and signal output.

Body Width: 41 inch

Compact size for easy integration into different devices or systems.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high image quality and low noise performance.

Package Shape or Style: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various applications.

Minimum Supply Voltage: 14.7 V

Lower supply voltage for efficient power consumption.

Maximum Operating Temperature: 40 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 2096

High horizontal pixel count for detailed and sharp images.

Output Type: VOLTAGE OUTPUT

Voltage output for easy signal processing and compatibility.

Minimum Operating Temperature: -30 °C

Allows for operation in cold temperatures without performance issues.

Maximum Operating Current: 9 mA

Low operating current for energy efficiency.

Dynamic Range: 72 dB

High dynamic range for capturing details in both bright and dark areas of an image.

Vertical Pixel: 2096

High vertical pixel count for detailed and sharp images.

Body Length/Diameter: 43.5 mm

Compact size for easy integration and mounting.

Optical Format (inch): 4/3

Common optical format for compatibility with various lenses and systems.

Data Rate: 40 Mbps

High data rate for fast and seamless image transfer.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Frame Rate: 30 fps

Standard frame rate for smooth and real-time image capture.

Array Type: INTERLINE

Interline array type for fast readout and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for secure and stable installation.

Technical Specifications

Image Sensors KAE-04471-ABA-SP-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 45 UV/ELECTRON

Array Type:

INTERLINE

Body Width:

41 inch

Body Length/Diameter:

43.5 mm

Data Rate:

40 Mbps

Dynamic Range:

72 dB

Frame Rate:

30 fps

Horizontal Pixel:

2096

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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