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AR023ZCSC00SUEA0-DRBR

Onsemi

AR023ZCSC00SUEA0-DRBR by Onsemi

Onsemi's AR023ZCSC00SUEA0-DRBR is a 3x3 um CMOS image sensor with 1928H x 1088V pixels. It operates at 48 MHz master clock, offers 105 dB dynamic range, and has a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,348 parts In-Stock

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Digiode

USA . 977 parts In-Stock

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,415 parts In-Stock

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$2.508

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Kulean Microsystems

USA . 6,875 parts In-Stock

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SupplyDigital Components

Austria . 6,819 parts In-Stock

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TANS Electronics

Latvia . 6,570 parts In-Stock

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Corphita

USA . 2,298 parts In-Stock

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Problanco Electronics

Mexico . 1,890 parts In-Stock

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Native Components

USA . 821 parts In-Stock

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Corohmni

South Africa . 314 parts In-Stock

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UHIMA Technologies

Türkiye . 294 parts In-Stock

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Overview

Enhance your imaging solutions with the AR023ZCSC00SUEA0-DRBR by Onsemi, a top-tier manufacturer known for producing high-quality image sensors. This cutting-edge sensor offers unparalleled performance and reliability, making it ideal for a wide range of applications. Whether you're capturing stunning images or enhancing security systems, this product provides exceptional value, benefits, and advantages to meet your needs. Upgrade your technology with the AR023ZCSC00SUEA0-DRBR and experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 3x3

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.9V

Higher supply voltage allows for better performance and signal strength.

Master Clock: 48 MHz

High master clock speed enables quick data processing and image capture.

Body Width: 10 inch

Compact body width facilitates easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensor technology provides high-quality images with low power consumption.

Package Shape or Style: SQUARE

Square package shape offers efficient use of space and easy mounting options.

Minimum Supply Voltage: 1.7V

Low minimum supply voltage helps in saving power and improving energy efficiency.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in various environments.

Horizontal Pixel: 1928

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.4-1.5V

Wide output range provides flexibility in signal processing and compatibility with different devices.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and transmission for efficient use.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Maximum Operating Current: 265 mA

High maximum operating current allows for strong signal transmission and performance.

Housing: PLASTIC

Plastic housing is lightweight, cost-effective, and durable.

Dynamic Range: 105 dB

High dynamic range allows for capturing a wide range of light intensities without losing detail.

Vertical Pixel: 1088

High vertical pixel count enhances image quality and resolution.

Body Length/Diameter: 10 mm

Compact body size facilitates easy installation and integration into various devices.

Optical Format (inch): 1/2.7

Optical format ensures compatibility with different lenses and imaging systems.

Termination Type: SOLDER

Solder termination provides secure and reliable connections for long-term usage.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and data transmission for seamless integration.

Frame Rate: 60 fps

High frame rate enables smooth and fluid video recording and image capture.

Array Type: FRAME

Frame array type allows for efficient image capture and processing in a structured manner.

Sensitivity (V/lx.s): 4 V/lx.s

High sensitivity enables the sensor to capture clear images even in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy and secure installation on PCBs and other surfaces.

Technical Specifications

Image Sensors AR023ZCSC00SUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1 V; ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.4 mm

Body Length/Diameter:

10 mm

Dynamic Range:

105 dB

Frame Rate:

60 fps

Horizontal Pixel:

1928

Housing:

PLASTIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

265 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1088

Trade Compliance

AR023ZCSC00SUEA0-DRBR Sensors & Transducers trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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