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CYIL1SN3000AA-GZDC

Onsemi

CYIL1SN3000AA-GZDC by Onsemi

CYIL1SN3000AA-GZDC by Onsemi is an 8x8 um CMOS image sensor with a max supply voltage of 3.465 V and master clock at 206 MHz. Ideal for applications requiring high-resolution imaging, it offers a frame rate of 485 fps, full-frame array type, and a dynamic range of 80 dB.

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Northwest PG Solutions

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TANS Electronics

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Overview

Elevate your imaging experience with the CYIL1SN3000AA-GZDC by Onsemi. Crafted with precision and expertise, this image sensor delivers unparalleled quality and performance in a compact package. Ideal for a wide range of applications, from security cameras to industrial automation, this sensor offers crystal-clear images and fast processing speeds. Trust Onsemi to provide cutting-edge technology that exceeds expectations. Experience the difference with the CYIL1SN3000AA-GZDC.

Feature Benefit Bullets

Pixel Size (um): 8X8

With a small pixel size of 8X8 um, this image sensor can capture detailed images with high resolution.

Maximum Supply Voltage: 3.465 V

The high maximum supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 206 MHz

The high master clock frequency of 206 MHz allows for fast and efficient processing of image data.

Body Width: 27 inch

The compact body width of 27 inches makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor type ensures low power consumption and high sensitivity to light, making it ideal for a wide range of imaging applications.

Body Height: 4.3 mm

The slim body height of 4.3 mm allows for easy integration into various devices without adding unnecessary bulk.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides ease of mounting and handling during assembly.

Minimum Supply Voltage: 3.135 V

The low minimum supply voltage ensures efficient power usage and extends the lifespan of the image sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60 °C, this image sensor can function reliably in a variety of environmental conditions.

Horizontal Pixel: 1696

The high horizontal pixel count of 1696 contributes to producing sharp and detailed images with accurate color reproduction.

Output Type: DIGITAL OUTPUT

The digital output type simplifies the integration of the image sensor with digital systems for seamless data processing.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C ensures that the image sensor remains operational even in cold environments.

Housing: CERAMIC

The ceramic housing provides high durability and resistance to temperature fluctuations, ensuring the longevity of the image sensor.

Dynamic Range: 80 dB

The high dynamic range of 80 dB allows the image sensor to capture a wide range of light intensities, resulting in well-exposed and balanced images.

Vertical Pixel: 1710

The high vertical pixel count of 1710 contributes to better image resolution and clarity.

Body Length/Diameter: 31 mm

The moderate body length/diameter of 31 mm offers a balance between compactness and functionality in various applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections during installation and usage.

Frame Rate: 485 fps

With a high frame rate of 485 frames per second, this image sensor can capture fast-moving objects with smooth motion and minimal blur.

Array Type: FULL FRAME

The full-frame array type maximizes the sensor's light-gathering capacity, resulting in high-quality images with excellent clarity and detail.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable mounting of the image sensor on circuit boards or other surfaces.

Technical Specifications

Image Sensors CYIL1SN3000AA-GZDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ITS ALSO OPERATES 2.5V

Array Type:

FULL FRAME

Body Width:

27 inch

Body Height:

4.3 mm

Body Length/Diameter:

31 mm

Dynamic Range:

80 dB

Frame Rate:

485 fps

Horizontal Pixel:

1696

Housing:

CERAMIC

Master Clock:

206 MHz

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Type:

Package Shape or Style:

Pixel Size (um):

8X8

Sensors or Transducers Type:

Maximum Supply Voltage:

3.465 V

Minimum Supply Voltage:

3.135 V

Termination Type:

SOLDER

Vertical Pixel:

1710

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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