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CYIL1SC1300AA-GAC

Onsemi

CYIL1SC1300AA-GAC by Onsemi

CYIL1SC1300AA-GAC by Onsemi is an image sensor with 14x14 um pixel size, 1280 horizontal pixels, and 1024 vertical pixels. It operates at a max supply voltage of 6V and has a master clock of 20 MHz. Ideal for applications requiring high-resolution imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,144 parts In-Stock

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Vyrian

USA . 309 parts In-Stock

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Kulean Microsystems

USA . 8,353 parts In-Stock

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SupplyDigital Components

Austria . 6,239 parts In-Stock

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Problanco Electronics

Mexico . 3,936 parts In-Stock

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Northwest PG Solutions

USA . 1,611 parts In-Stock

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TANS Electronics

Latvia . 1,308 parts In-Stock

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UHIMA Technologies

Türkiye . 797 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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Native Components

USA . 300 parts In-Stock

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Corphita

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Overview

Capture stunning images with the CYIL1SC1300AA-GAC image sensor from Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This innovative sensor is perfect for applications such as surveillance cameras, medical imaging, and industrial automation. With a wide range of benefits including high sensitivity, fast frame rate, and a dynamic range of 62 dB, this sensor offers exceptional value to customers looking for superior image quality. Upgrade your imaging system with the CYIL1SC1300AA-GAC and experience the difference today.

Feature Benefit Bullets

Pixel Size (um): 14X14

Smaller pixel size allows for higher resolution images to be captured with this image sensor.

Maximum Supply Voltage: 6V

Higher supply voltage allows for better performance and flexibility in various applications.

Master Clock: 20 MHz

High master clock frequency enables fast data capture and processing.

Body Width: 40.01 inch

Compact size makes it easy to integrate this image sensor into different systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology ensures low power consumption and high image quality.

Package Shape or Style: SQUARE

Square shape allows for efficient layout and placement on circuit boards.

Minimum Supply Voltage: 3V

Low minimum supply voltage helps in reducing power consumption and operating costs.

Maximum Operating Temperature: 60 °C

Wide operating temperature range enables this image sensor to be used in various environments.

Horizontal Pixel: 1280

High horizontal pixel count results in detailed and sharp images.

Output Range: 5V

Wide output range allows for flexibility in interfacing with other components.

Output Type: ANALOG VOLTAGE

Analog output simplifies integration with analog signal processing circuits.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold conditions.

Maximum Operating Current: 50 mA

Low operating current helps in reducing power consumption and heat generation.

Housing: CERAMIC

Ceramic housing provides durability and protection to the image sensor.

Dynamic Range: 62 dB

High dynamic range allows for capturing both bright and dark areas in an image with good detail.

Vertical Pixel: 1024

High vertical pixel count ensures high-resolution images with fine details.

Body Length/Diameter: 40.01 mm

Compact size and shape make installation and integration easy.

Optical Format (inch): 1.43

Optical format specifies the sensor size and compatibility with different lenses and optical systems.

Data Rate: 40 Mbps

High data rate allows for fast transmission of image data.

Termination Type: SOLDER

Solder termination provides a reliable and durable connection to the image sensor.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface simplifies communication and integration with other devices.

Frame Rate: 450 fps

High frame rate enables capturing fast-moving objects with clarity and detail.

Array Type: FULL FRAME

Full frame array enables capturing the entire image in one shot without cropping or interpolation.

Sensitivity (V/lx.s): 21.43 V/lx.s

High sensitivity allows for capturing clear images even in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature enables easy and secure installation on PCBs.

Technical Specifications

Image Sensors CYIL1SC1300AA-GAC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FULL FRAME

Body Width:

40.01 inch

Body Height:

2.8 mm

Body Length/Diameter:

40.01 mm

Data Rate:

40 Mbps

Dynamic Range:

62 dB

Frame Rate:

450 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

20 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1.43

Output Interface Type:

3-WIRE INTERFACE

Output Range:

5V

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensitivity (V/lx.s):

21.43 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

6 V

Minimum Supply Voltage:

3 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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