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CYIL2SC1300AA-GZDC

Onsemi

CYIL2SC1300AA-GZDC by Onsemi

Onsemi's CYIL2SC1300AA-GZDC is a CMOS image sensor with 14x14 um pixel size, 1280x1024 resolution, and 315 MHz master clock. Ideal for applications requiring high-speed digital imaging in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 997 parts In-Stock

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Digiode

USA . 768 parts In-Stock

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Native Components

USA . 813 parts In-Stock

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$186.298

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$178.846

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Northwest PG Solutions

USA . 1,520 parts In-Stock

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$204.928

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TANS Electronics

Latvia . 7,276 parts In-Stock

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SupplyDigital Components

Austria . 4,968 parts In-Stock

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Problanco Electronics

Mexico . 3,625 parts In-Stock

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Corphita

USA . 2,459 parts In-Stock

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Kulean Microsystems

USA . 2,132 parts In-Stock

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Overview

Discover the world in stunning clarity with the CYIL2SC1300AA-GZDC image sensor by Onsemi. Crafted with precision and expertise, this sensor offers unparalleled quality and performance for a wide range of applications. Whether you're capturing breathtaking landscapes or intricate details, this sensor delivers crisp, vibrant images with exceptional dynamic range. Trust Onsemi to bring your vision to life with cutting-edge technology and reliable innovation, setting new standards in image sensor excellence. Elevate your imaging experience with the CYIL2SC1300AA-GZDC – where every pixel tells a story.

Feature Benefit Bullets

Pixel Size (um): 14X14

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 2.625 V

Higher maximum supply voltage allows for better performance and stability of the image sensor.

Master Clock: 315 MHz

High master clock frequency allows for fast readout and processing of image data.

Body Width: 30.5 inch

Compact body width allows for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality.

Body Height: 3.75 mm

Low body height enables the image sensor to be used in thin devices or applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers efficient use of space and easy mounting options.

Minimum Supply Voltage: 2.375 V

Low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes this image sensor suitable for various environments.

Horizontal Pixel: 1280

High horizontal pixel count provides high-resolution images with more details.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with other digital devices and systems.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold conditions.

Housing: CERAMIC

Ceramic housing offers excellent thermal conductivity and durability for long-term use.

Dynamic Range: 90 dB

High dynamic range allows the image sensor to capture both bright and dark areas accurately.

Vertical Pixel: 1024

High vertical pixel count enhances the image sensor's ability to capture detailed images.

Body Length/Diameter: 35.5 mm

Compact body length/diameter allows for easy integration and placement of the image sensor.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the image sensor.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface simplifies the connectivity of the image sensor with external devices and systems.

Frame Rate: 500 fps

High frame rate enables the image sensor to capture fast-moving subjects with smooth motion.

Array Type: FULL FRAME

Full frame array type ensures that the entire image sensor surface is utilized for capturing images.

Sensitivity (V/lx.s): 10.16 V/lx.s

High sensitivity allows the image sensor to work well in low-light conditions and capture clear images.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount provides a secure and stable mounting option for the image sensor in various applications.

Technical Specifications

Image Sensors CYIL2SC1300AA-GZDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SNAPSHOT SHUTTER

Array Type:

FULL FRAME

Body Width:

30.5 inch

Body Height:

3.75 mm

Body Length/Diameter:

35.5 mm

Dynamic Range:

90 dB

Frame Rate:

500 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

315 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

14X14

Sensitivity (V/lx.s):

10.16 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

2.625 V

Minimum Supply Voltage:

2.375 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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