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NOIP1FN0300A-QDI

Onsemi

NOIP1FN0300A-QDI by Onsemi

NOIP1FN0300A-QDI by Onsemi is a 640x480 CMOS image sensor with 4.80um pixel size. It operates at 1.7-1.9V, has a master clock of 72MHz, and offers a dynamic range of 60dB. Ideal for high-speed imaging applications requiring digital voltage output and a frame rate of up to 815fps.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 1,207 parts In-Stock

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Overview

Capture the world with crystal-clear precision using the NOIP1FN0300A-QDI by Onsemi. As a leading manufacturer in image sensor technology, Onsemi delivers unparalleled quality and reliability in every product. Perfect for a wide array of applications, this image sensor boasts exceptional performance and versatility. Its advanced features and cutting-edge design provide customers with unmatched value and benefits, making it the ideal choice for all your imaging needs. Elevate your projects to new heights with the NOIP1FN0300A-QDI and experience the difference today!

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Larger pixel size allows for better light sensitivity and improved image quality.

Maximum Supply Voltage: 1.9 V

Higher maximum supply voltage allows for better performance and flexibility in power management.

Master Clock: 72 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 14.22 inch

Compact body width makes the sensor suitable for various applications with limited space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption, high quality imaging, and good noise performance.

Package Shape or Style: SQUARE

Square package shape allows for easy integration and compact design in electronic devices.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable performance in various environmental conditions.

Horizontal Pixel: 640

High horizontal pixel count provides detailed and sharp images.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration into digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in extreme cold conditions without performance degradation.

Maximum Operating Current: 80 mA

Low maximum operating current helps in energy efficiency and prolonging battery life.

Dynamic Range: 60 dB

A high dynamic range allows for capturing a wide range of light intensities in a single image.

Vertical Pixel: 480

High vertical pixel count contributes to better image resolution and quality.

Body Length/Diameter: 14.22 mm

Compact body length/diameter allows for easy integration into various electronic devices.

Spectral Response (nm): 400-1000

Wide spectral response range enables capturing images in various lighting conditions.

Optical Format (inch): 1/4

Common optical format suitable for a wide range of applications and lens compatibility.

Termination Type: SOLDER

Solder termination makes installation and connection easier and more reliable.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface provides a reliable and fast data transfer method for the sensor output.

Frame Rate: 815 fps

High frame rate enables capturing fast-moving objects and smooth video recording.

Array Type: FRAME

Frame array type offers versatility in capturing different image sizes and resolutions.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on circuit boards.

Technical Specifications

Image Sensors NOIP1FN0300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

815 fps

Horizontal Pixel:

640

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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