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MT9P001I12-N4005-DR

Onsemi

MT9P001I12-N4005-DR by Onsemi

The Onsemi MT9P001I12-N4005-DR is a CMOS image sensor with 2592x1944 pixels, 70.1 dB dynamic range, and 48 MHz master clock. It operates at -30 to 70 °C, with output range of 2.60-22.30mA for digital current applications like surveillance cameras and industrial imaging systems.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 7,763 parts In-Stock

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Flip Electronics

USA . 2,540 parts In-Stock

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Digiode

USA . 1,940 parts In-Stock

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AZTECH Wire

Italy . 250 parts In-Stock

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Kulean Microsystems

USA . 5,697 parts In-Stock

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SupplyDigital Components

Austria . 5,283 parts In-Stock

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TANS Electronics

Latvia . 3,626 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 1,358 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 195 parts In-Stock

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Corohmni

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Overview

Capture every moment in stunning detail with the MT9P001I12-N4005-DR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that are trusted by professionals worldwide. Ideal for a wide range of applications, this image sensor offers exceptional value with its high resolution and advanced features. Whether you're capturing breathtaking landscapes or fast-paced action shots, this sensor ensures superior image quality, making it the perfect choice for all your imaging needs. Elevate your photography and experience the difference with Onsemi's MT9P001I12-N4005-DR.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

Smaller pixel size allows for higher resolution images to be captured with finer details.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 48 MHz

High master clock frequency enables faster image processing and data transfer capabilities.

Power Supplies (V): 1.8

Stable power supply ensures reliable performance of the image sensor.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage allows for operation in low power scenarios.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes the image sensor suitable for various environmental conditions.

Horizontal Pixel: 2592

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 2.60-22.30mA

Wide output range enables flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL CURRENT

Digital current output simplifies interfacing with microcontrollers and digital processing units.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance in extreme cold conditions.

Maximum Operating Current: 35 mA

Low operating current helps in reducing power consumption and extending battery life.

Dynamic Range: 70.1 dB

High dynamic range allows the sensor to capture a wide range of light intensities, resulting in better image quality.

Vertical Pixel: 1944

High vertical pixel count contributes to detailed and clear images with good vertical resolution.

Optical Format (inch): 1/2.5

Common optical format allows for easy integration with existing camera systems and lenses.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the image sensor in the circuit.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices or systems.

Frame Rate: 15 fps

Decent frame rate enables smooth video recording and real-time image capture.

Array Type: FRAME

Frame array design allows for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes the image sensor easy to integrate into compact and space-constrained devices.

Technical Specifications

Image Sensors MT9P001I12-N4005-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Dynamic Range:

70.1 dB

Frame Rate:

15 fps

Horizontal Pixel:

2592

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

2.20X2.20

Power Supplies (V):

1.8

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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