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KAI-08051-FBA-JB-AE

Onsemi

KAI-08051-FBA-JB-AE by Onsemi

KAI-08051-FBA-JB-AE by Onsemi is an image sensor with 5.5X5.5 um pixel size, 3364 horizontal pixels, and 2520 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,126 parts In-Stock

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Digiode

USA . 918 parts In-Stock

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Problanco Electronics

Mexico . 7,107 parts In-Stock

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Kulean Microsystems

USA . 5,996 parts In-Stock

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SupplyDigital Components

Austria . 3,622 parts In-Stock

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Corphita

USA . 2,232 parts In-Stock

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TANS Electronics

Latvia . 1,726 parts In-Stock

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Corohmni

South Africa . 398 parts In-Stock

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UHIMA Technologies

Türkiye . 351 parts In-Stock

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Overview

Capture stunning images with the KAI-08051-FBA-JB-AE by Onsemi. With a pixel size of 5.5X5.5 um, this CCD image sensor offers unparalleled quality and precision for a wide range of applications. Onsemi's reputation for manufacturing excellence ensures reliability and performance. Whether you're in the medical, industrial, or automotive industry, this image sensor will provide value, benefits, and advantages that will take your imaging capabilities to the next level. Upgrade your technology with Onsemi's KAI-08051-FBA-JB-AE today.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution and detailed images to be captured.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options and ensures stable operation.

Body Width: 29 inch

The compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high quality image output, making this product a reliable choice.

Package Shape or Style: RECTANGULAR

The rectangular shape allows for easier integration into various devices and systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this sensor can withstand harsh environmental conditions.

Horizontal Pixel: 3364

The high number of horizontal pixels ensures sharp and detailed images.

Minimum Operating Temperature: -50 °C

The wide range of minimum operating temperature allows for use in various environments, including extreme cold conditions.

Dynamic Range: 66 dB

A high dynamic range provides better contrast and image quality, especially in challenging lighting conditions.

Vertical Pixel: 2520

The high number of vertical pixels contributes to the overall image resolution and clarity.

Body Length/Diameter: 40 mm

The moderate body length/diameter ratio ensures a good balance between compactness and functionality.

Optical Format (inch): 4/3

The 4/3 optical format is a popular choice for various imaging applications, providing versatility and compatibility.

Termination Type: SOLDER

Solder termination offers a reliable connection and ease of installation in electronic circuits.

Array Type: INTERLINE

Interline array type provides fast readout speeds and reduced noise levels, enhancing overall image quality.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting ensures secure attachment and stability in the device or system.

Technical Specifications

Image Sensors KAI-08051-FBA-JB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 39 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3364

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2520

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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