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KAI-02170-FBA-JD-BA

Onsemi

KAI-02170-FBA-JD-BA by Onsemi

KAI-02170-FBA-JD-BA by Onsemi is an image sensor with 1920x1080 resolution, 7.4um pixel size, and 70.2dB dynamic range. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-quality imaging in various environmental conditions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,919 parts In-Stock

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3,919

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Digiode

USA . 2,437 parts In-Stock

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2,437

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 149 parts In-Stock

1+ parts

$21.830

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149

$21.830

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SupplyDigital Components

Austria . 8,356 parts In-Stock

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8,356

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Kulean Microsystems

USA . 6,324 parts In-Stock

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6,324

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Corphita

USA . 978 parts In-Stock

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978

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TANS Electronics

Latvia . 363 parts In-Stock

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363

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Problanco Electronics

Mexico . 256 parts In-Stock

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256

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Corohmni

South Africa . 103 parts In-Stock

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103

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UHIMA Technologies

Türkiye . 48 parts In-Stock

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48

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Overview

Upgrade your imaging solutions with the KAI-02170-FBA-JD-BA by Onsemi, a top-of-the-line image sensor designed to deliver unmatched quality and performance. Manufactured by Onsemi, a renowned industry leader, this sensor boasts superior pixel size and dynamic range, making it perfect for a wide range of applications. From security cameras to medical imaging equipment, this sensor offers exceptional value, reliability, and precision, ensuring that your images are crisp, clear, and detailed every time. Experience the difference with the KAI-02170-FBA-JD-BA and unlock new possibilities in imaging technology.

Feature Benefit Bullets

Pixel Size (um) 7.4X7.4

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage 15.5 V

Allows the sensor to be used in a wide range of electronic systems without voltage compatibility issues.

Body Width 20.07 inch

Compact size makes it suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture, making this product ideal for applications requiring clear and accurate images.

Package Shape or Style RECTANGULAR

Rectangular shape allows for easy integration and mounting in electronic devices.

Minimum Supply Voltage 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature 70 °C

Wide operating temperature range ensures the sensor can be used in various environmental conditions without performance issues.

Horizontal Pixel 1920

High pixel count provides sharp and detailed images for a superior visual experience.

Minimum Operating Temperature -50 °C

Can operate in very low temperature environments without compromising performance.

Dynamic Range 70.2 dB

High dynamic range allows the sensor to capture both bright and dark areas in an image with great detail.

Vertical Pixel 1080

Combined with horizontal pixels, the high resolution ensures clear and crisp images for various applications.

Body Length/Diameter 33.02 mm

Compact size and shape make it easy to mount and integrate into different devices without taking up much space.

Termination Type SOLDER

Solder termination ensures secure and reliable electrical connections for stable performance.

Array Type INTERLINE

Interline array type helps in reducing image distortion and provides accurate image reproduction.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting feature makes installation easy and secure, ideal for industrial applications where stability is crucial.

Technical Specifications

Image Sensors KAI-02170-FBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW AND 33 MICRO VOLT PER ELECTRON HIGH; ELECTRONIC SHUTTER; DYNAMIC RANGE, EXTENDED LINEAR OF 82.5

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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