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KAF-31600

Onsemi

KAF-31600 by Onsemi

The Onsemi KAF-31600 is a CCD image sensor with 6.8x6.8 um pixel size, offering 6496 (H) x 4872 (V) resolution. It operates b/w 0-60 °C, with a dynamic range of 70.5 dB and outputs analog voltage signals at a rate of 24 Mbps. Ideal for high-resolution imaging applications in industries like astronomy and microscopy.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,356 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 6,349 parts In-Stock

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SupplyDigital Components

Austria . 3,134 parts In-Stock

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Problanco Electronics

Mexico . 1,817 parts In-Stock

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Kulean Microsystems

USA . 1,587 parts In-Stock

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Corohmni

South Africa . 232 parts In-Stock

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UHIMA Technologies

Türkiye . 231 parts In-Stock

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Corphita

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Overview

Capture the world in stunning detail with the Onsemi KAF-31600 Image Sensor. Manufactured by industry leader Onsemi, this sensor offers unparalleled quality and reliability for a wide range of applications. From high-resolution photography to advanced scientific imaging, this sensor delivers exceptional performance with a wide dynamic range and high pixel count. Trust Onsemi's expertise and experience to bring your vision to life with the KAF-31600 Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 6.8X6.8

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures stable operation and sufficient power supply for the image sensor.

Body Width: 47.5 inch

The compact size of the body makes it easy to integrate into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and sensitivity, making this image sensor a great choice for capturing clear and detailed images.

Package Shape or Style: RECTANGULAR

The rectangular package shape makes it easy to mount and integrate into different systems or devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that the image sensor can operate efficiently even with lower power supply.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature allows the sensor to be used in a variety of environments without overheating.

Horizontal Pixel: 6496

The high horizontal pixel count results in high-resolution images with sharp details.

Output Type: ANALOG VOLTAGE

Analog voltage output provides a continuous signal for further processing or analysis.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures that the image sensor can still function properly in cold environments.

Dynamic Range: 70.5 dB

The high dynamic range allows the sensor to capture both bright and dark areas in a scene with great detail and accuracy.

Vertical Pixel: 4872

The high vertical pixel count contributes to the overall image quality and resolution of the sensor.

Body Length/Diameter: 55.89 mm

The medium-sized body allows for easy handling and integration into different devices or systems.

Spectral Response (nm): 400-700

The wide spectral response range allows the sensor to capture images across different wavelengths of light, making it versatile for various applications.

Data Rate: 24 Mbps

The high data rate allows for fast and efficient transfer of image data, suitable for real-time imaging applications.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the sensor, ensuring stable operation over time.

Array Type: FULL FRAME

Full-frame array type means that the entire sensor area is utilized for image capture, resulting in high-quality images without any cropping or loss of data.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature makes it easy to securely attach the sensor to a PCB or other mounting surface for stable operation.

Technical Specifications

Image Sensors KAF-31600 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FULL FRAME

Body Width:

47.5 inch

Body Height:

3.51 mm

Body Length/Diameter:

55.89 mm

Data Rate:

24 Mbps

Dynamic Range:

70.5 dB

Horizontal Pixel:

6496

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

6.8X6.8

Sensors or Transducers Type:

Spectral Response (nm):

400-700

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4872

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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