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AR0134CSSC00SPCA0-DRBR

Onsemi

AR0134CSSC00SPCA0-DRBR by Onsemi

Onsemi's AR0134CSSC00SPCA0-DRBR is a 1/3 inch CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 64dB dynamic range. It operates at -30 to 70 °C, with a max supply voltage of 1.95V and data rate of 700Mbps. Ideal for applications requiring high-quality digital imaging in various environments.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 4,336 parts In-Stock

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Flip Electronics

USA . 4,336 parts In-Stock

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Vyrian

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Digiode

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Native Components

USA . 362 parts In-Stock

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$0.386

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$0.370

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Northwest PG Solutions

USA . 2,205 parts In-Stock

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AZTECH Wire

Italy . 956 parts In-Stock

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SupplyDigital Components

Austria . 8,238 parts In-Stock

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Problanco Electronics

Mexico . 5,579 parts In-Stock

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TANS Electronics

Latvia . 3,125 parts In-Stock

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Kulean Microsystems

USA . 1,103 parts In-Stock

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Corphita

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Corohmni

South Africa . 453 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 211 parts In-Stock

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Overview

Experience crystal-clear imaging with the AR0134CSSC00SPCA0-DRBR Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in every product they create. Designed for high-performance applications, this image sensor offers unparalleled value with its impressive dynamic range and fast data rate. Whether you're in robotics, surveillance, or automotive industries, the AR0134CSSC00SPCA0-DRBR delivers exceptional results, making it the perfect choice for your next project. Elevate your imaging experience with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 3.75

The small pixel size of 3.75um allows for high-resolution image capture and detail, making this image sensor suitable for applications requiring sharp and clear images.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage of 1.95V provides ample power for efficient operation of the image sensor, ensuring reliable performance.

Master Clock: 50 MHz

The high master clock frequency of 50MHz enables fast data processing and image capture, making this image sensor suitable for applications requiring quick response times.

Body Width: 10 inch

The compact body width of 10 inches makes this image sensor easy to integrate into various devices and systems, offering flexibility in design and implementation.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and fast data readout, making it a versatile and efficient choice for imaging applications.

Package Shape or Style: SQUARE

The square package shape of this image sensor allows for easy and secure mounting, ensuring stability and reliability in operation.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage of 1.7V enables power-efficient operation, reducing energy consumption and making this image sensor suitable for battery-powered devices.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70 °C, this image sensor can withstand harsh environmental conditions, ensuring durability and reliability in various applications.

Horizontal Pixel: 1280

The high horizontal pixel count of 1280 enables high-resolution image capture with detailed and sharp images, making this image sensor suitable for applications requiring high-quality visuals.

Output Range: -22-22mA

The wide output range of -22-22mA allows for flexibility in signal transmission and processing, making this image sensor versatile and compatible with different systems and components.

Output Type: DIGITAL CURRENT

The digital current output type ensures accurate and reliable signal transmission, reducing noise and interference for high-quality image data, making this image sensor suitable for precision imaging applications.

Minimum Operating Temperature: -30 °C

With a low minimum operating temperature of -30 °C, this image sensor can function in cold environments, making it suitable for a wide range of applications in varying conditions.

Maximum Operating Current: 60 mA

The high maximum operating current of 60mA ensures stable and efficient performance of the image sensor under load, making it reliable for continuous operation in demanding applications.

Dynamic Range: 64 dB

The wide dynamic range of 64dB allows for capturing a wide range of light intensities accurately, ensuring clear images with details in both bright and dark areas, making this image sensor suitable for diverse lighting conditions.

Vertical Pixel: 960

The vertical pixel count of 960 contributes to the high-resolution image output of this sensor, offering detailed and sharp images for applications requiring precise visual data.

Body Length/Diameter: 10 mm

The compact body length or diameter of 10mm makes this image sensor suitable for space-constrained applications, offering flexibility in design and integration.

Optical Format (inch): 1/3

With an optical format of 1/3 inch, this image sensor offers compatibility with standard optical systems and lenses, making it easier to integrate into imaging setups.

Data Rate: 700 Mbps

The high data rate of 700Mbps enables fast and efficient data transfer and processing, ensuring real-time image capture and transmission for time-sensitive applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, reducing the risk of signal loss or interference, making this image sensor suitable for stable and consistent performance.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type provides a simple and efficient method of communication with other devices and systems, offering compatibility and ease of integration for seamless operation.

Frame Rate: 60 fps

With a high frame rate of 60 frames per second, this image sensor can capture fast-moving objects and scenes with smooth and clear motion, making it suitable for applications requiring high-speed imaging.

Array Type: SINGLE FRAME

The single frame array type simplifies the image capture and processing workflow, offering straightforward operation and efficient data handling for streamlined imaging applications.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor on PCBs or other surfaces, offering convenience and reliability in product assembly.

Technical Specifications

Image Sensors AR0134CSSC00SPCA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.5-3.1V

Array Type:

SINGLE FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Data Rate:

700 Mbps

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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