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NOIP2SE1300A-QDI

Onsemi

NOIP2SE1300A-QDI by Onsemi

NOIP2SE1300A-QDI by Onsemi is an image sensor with 1280x1024 resolution, 4.80um pixel size, and 72MHz master clock. It operates b/w -40 to 85 °C and has a dynamic range of 60dB. Ideal for applications requiring high-speed digital imaging in industrial automation and surveillance systems.

Median Price

$10.940

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 61 parts In-Stock

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Flip Electronics (Authorized)

USA . 61 parts In-Stock

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Vyrian

USA . 6,754 parts In-Stock

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Digiode

USA . 877 parts In-Stock

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Flip Electronics

USA . 61 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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Problanco Electronics

Mexico . 7,738 parts In-Stock

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SupplyDigital Components

Austria . 2,367 parts In-Stock

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Kulean Microsystems

USA . 2,207 parts In-Stock

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TANS Electronics

Latvia . 1,712 parts In-Stock

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Corphita

USA . 650 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 192 parts In-Stock

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Capture stunning images with the NOIP2SE1300A-QDI image sensor by Onsemi. Known for their top-notch quality and innovative technology, Onsemi delivers unparalleled performance in the field of image sensors. This product is perfect for a wide range of applications, offering customers exceptional value and benefits. Whether you're a professional photographer, a tech enthusiast, or a developer looking to enhance your projects, the NOIP2SE1300A-QDI provides superior image quality, reliability, and versatility. Elevate your imaging experience with this cutting-edge sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Provides high resolution images with clear details.

Maximum Supply Voltage: 1.9 V

Efficient power usage and safe operation within specified limits.

Master Clock: 72 MHz

Ensures fast processing and data transfer.

Body Width: 14.22 inch

Compact form factor for easy integration into various devices.

Power Supplies (V): 3.3

Stable power source for reliable performance.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides low noise and high sensitivity for quality images.

Body Height: 2.28 mm

Slim profile for flexibility in design and installation.

Package Shape or Style: SQUARE

Space-saving design for compact devices.

Minimum Supply Voltage: 1.7 V

Allows for lower power consumption without compromising performance.

Maximum Operating Temperature: 85 °C

Suitable for a wide range of environmental conditions.

Horizontal Pixel: 1280

High-resolution images with fine details and clarity.

Output Type: DIGITAL VOLTAGE

Provides reliable and consistent output signals.

Minimum Operating Temperature: -40 °C

Ensures operation in extreme cold conditions.

Dynamic Range: 60 dB

Captures a wide range of light intensities for balanced images.

Vertical Pixel: 1024

High-resolution images with clear vertical details.

Body Length/Diameter: 14.22 mm

Compact size for easy integration and space-constrained applications.

Spectral Response (nm): 400-1000

Covers a wide range of wavelengths for versatile imaging applications.

Optical Format (inch): 1/2

Standard format for compatibility with various lenses and systems.

Data Rate: 72 Mbps

Fast data transfer for real-time imaging applications.

Termination Type: SOLDER

Secure connections for reliable performance.

Output Interface Type: 4-WIRE INTERFACE

Efficient data transfer and communication with other devices.

Frame Rate: 43 fps

Smooth and clear image capture for dynamic scenes.

Array Type: FRAME

Organized array for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Easy installation on PCBs for streamlined manufacturing processes.

Technical Specifications

Image Sensors NOIP2SE1300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

43 fps

Horizontal Pixel:

1280

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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