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NOIP1SE5000A-QDI

Onsemi

NOIP1SE5000A-QDI by Onsemi

NOIP1SE5000A-QDI by Onsemi is a 1-inch CMOS image sensor with a pixel size of 4.8X4.8 um. It has a max supply voltage of 1.9V and operates at temperatures ranging from -40 to 85 °C. This sensor is commonly used in applications requiring high-resolution imaging at a frame rate of up to 100 fps.

Median Price

$465.732

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7 parts In-Stock

1+ parts

$402.640

100+ parts

$378.480

1k+ parts

$354.320

10k+ parts

-

7

$402.640

$378.480

$354.320

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Farnell

UK . 1 parts In-Stock

1+ parts

$445.245

100+ parts

-

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-

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1

$445.245

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DigiKey

USA . 1 parts In-Stock

1+ parts

$486.220

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-

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1

$486.220

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Verical

USA . 1 parts In-Stock

1+ parts

$502.050

100+ parts

$471.925

1k+ parts

$441.800

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1

$502.050

$471.925

$441.800

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Distributors (In-Stock)

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Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$417.260

100+ parts

-

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700

$417.260

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Digiode

USA . 1,036 parts In-Stock

1+ parts

$422.983

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-

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-

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1,036

$422.983

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DigiKey Marketplace

USA . 1 parts In-Stock

1+ parts

$486.220

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-

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-

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1

$486.220

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Vyrian

USA . 3,666 parts In-Stock

1+ parts

-

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3,666

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 257 parts In-Stock

1+ parts

$3.260

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-

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-

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257

$3.260

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AZTECH Wire

Italy . 439 parts In-Stock

1+ parts

$16.501

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-

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439

$16.501

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Continental Prestige Electronics

USA . 1 parts In-Stock

1+ parts

$352.000

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1

$352.000

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Ampacity Inc.

Singapore . 3 parts In-Stock

1+ parts

$378.460

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-

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3

$378.460

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Semicontronic

India . 3 parts In-Stock

1+ parts

$378.460

100+ parts

$368.998

1k+ parts

$367.106

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3

$378.460

$368.998

$367.106

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Corphita

USA . 211 parts In-Stock

1+ parts

$400.720

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211

$400.720

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Corohmni

South Africa . 363 parts In-Stock

1+ parts

$400.737

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363

$400.737

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$408.915

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$392.558

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100

$408.915

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$392.558

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Argo Parts USA

USA . 1,459 parts In-Stock

1+ parts

$416.850

100+ parts

$412.682

1k+ parts

$408.513

10k+ parts

$404.345

1,459

$416.850

$412.682

$408.513

$404.345

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$425.187

100+ parts

$425.187

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$425.187

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50

$425.187

$425.187

$425.187

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Modulus Dynamics

Lithuania . 600 parts In-Stock

1+ parts

$462.704

100+ parts

$458.076

1k+ parts

$444.195

10k+ parts

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600

$462.704

$458.076

$444.195

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SupplyDigital Components

Austria . 7,217 parts In-Stock

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Kulean Microsystems

USA . 7,059 parts In-Stock

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7,059

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Problanco Electronics

Mexico . 6,075 parts In-Stock

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6,075

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TANS Electronics

Latvia . 4,898 parts In-Stock

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4,898

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Perfect Parts

USA . 699 parts In-Stock

1+ parts

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699

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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UHIMA Technologies

Türkiye . 49 parts In-Stock

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49

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Overview

Discover the NOIP1SE5000A-QDI by Onsemi, an exceptional image sensor that combines top-quality manufacturing with cutting-edge technology. With its 4.8X4.8 pixel size and 2592 horizontal pixels, this sensor delivers outstanding image resolution and clarity. Suitable for a wide range of applications, from security systems to medical imaging, the NOIP1SE5000A-QDI offers customers unmatched value and benefits. Its 60 dB dynamic range ensures accurate capture of both bright and dark scenes, while the 100 fps frame rate guarantees smooth and seamless video recordings. Trust in Onsemi's expertise and choose the NOIP1SE5000A-QDI for superior performance and reliability.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

The small pixel size allows for high resolution images to be captured with fine details, making this image sensor ideal for applications requiring high image quality.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage ensures efficient power consumption and minimizes the risk of overheating, contributing to the longevity and reliability of the image sensor.

Master Clock: 360 MHz

The high master clock frequency enables fast data readout and processing, resulting in quick and smooth operation of the image sensor.

Body Width: 19 inch

The compact body width allows for easy integration into various devices and systems without taking up too much space, making this image sensor versatile and adaptable.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and excellent image quality, making it a preferred choice for many imaging applications.

Dynamic Range: 60 dB

The wide dynamic range allows the image sensor to capture both bright and dark areas in a scene with detail, ensuring high-quality images with accurate color reproduction.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the image sensor to function reliably in various environmental conditions, making it suitable for a wide range of applications.

Horizontal Pixel: 2592

The high horizontal pixel count results in high-resolution images with sharp details, making this image sensor ideal for applications requiring precise image capture.

Array Type: FRAME

The frame array type allows for capturing full-frame images at high speed, making this image sensor well-suited for applications requiring continuous image capturing.

Mounting Feature: SURFACE MOUNT

The surface mounting feature enables easy and secure installation of the image sensor onto circuit boards, ensuring reliable performance and durability.

Technical Specifications

Image Sensors NOIP1SE5000A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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