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AR0135CS2C00SUEA0-DPBR1

Onsemi

AR0135CS2C00SUEA0-DPBR1 by Onsemi

Onsemi's AR0135CS2C00SUEA0-DPBR1 is a 1/3 inch CMOS image sensor with 1280x960 pixels, 50 MHz master clock, and 71.1 dB dynamic range. Ideal for applications requiring high-resolution imaging at up to 54 fps in a compact surface-mount package.

Median Price

$31.410

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

AR0135CS2C00SUEA0-DPBR1 by Onsemi
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DigiKey

USA . 12 parts In-Stock

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$31.410

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Vyrian

USA . 4,235 parts In-Stock

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Digiode

USA . 568 parts In-Stock

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NAC Semi

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Corohmni

South Africa . 63 parts In-Stock

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$22.711

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SupplyDigital Components

Austria . 6,634 parts In-Stock

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Northwest PG Solutions

USA . 2,297 parts In-Stock

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Kulean Microsystems

USA . 2,185 parts In-Stock

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Corphita

USA . 1,652 parts In-Stock

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TANS Electronics

Latvia . 1,193 parts In-Stock

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Problanco Electronics

Mexico . 936 parts In-Stock

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Perfect Parts

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Futuretech Components

Singapore . 260 parts In-Stock

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Native Components

USA . 258 parts In-Stock

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UHIMA Technologies

Türkiye . 248 parts In-Stock

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Eastek

USA . 210 parts In-Stock

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GreenTree Electronics

Israel . 210 parts In-Stock

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Overview

Capture the world in stunning clarity with the AR0135CS2C00SUEA0-DPBR1 image sensor from Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. Ideal for a wide range of applications, this image sensor offers customers unrivaled value and benefits. Enhance your imaging experience with the AR0135CS2C00SUEA0-DPBR1 and unlock endless possibilities in photography, surveillance, automotive, and more. Choose Onsemi for superior performance and exceptional results.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage allows for better performance and flexibility in power supply options.

Master Clock: 50 MHz

High master clock frequency enables fast data readout and processing.

Sensor Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high sensitivity, making them suitable for various applications.

Minimum Operating Temperature: -30 °C

Wide operating temperature range allows for use in extreme environments.

Vertical Pixel: 960

High vertical pixel count enables capturing detailed images with smooth gradients.

Frame Rate: 54 fps

High frame rate ensures smooth video capture with no motion blur.

Technical Specifications

Image Sensors AR0135CS2C00SUEA0-DPBR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.39 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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