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AR0147ATSC00XUEA0-DRBR

Onsemi

AR0147ATSC00XUEA0-DRBR by Onsemi

The Onsemi AR0147ATSC00XUEA0-DRBR is an image sensor with 3x3 um pixel size, 50 MHz master clock, and 140 dB dynamic range. Ideal for applications requiring high-resolution imaging in a compact form factor, such as surveillance cameras or industrial machine vision systems.

Median Price

$34.400

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 320 parts In-Stock

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$34.400

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320

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$34.400

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Flip Electronics (Authorized)

USA . 320 parts In-Stock

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320

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VNN

France . 3,332 parts In-Stock

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3,332

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Vyrian

USA . 3,273 parts In-Stock

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Digiode

USA . 1,883 parts In-Stock

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Flip Electronics

USA . 320 parts In-Stock

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320

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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AZTECH Wire

Italy . 358 parts In-Stock

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$8.190

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358

$8.190

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Semicontronic

India . 320 parts In-Stock

1+ parts

$29.240

100+ parts

$28.509

1k+ parts

$28.363

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320

$29.240

$28.509

$28.363

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Ampacity Inc.

Singapore . 217 parts In-Stock

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$29.240

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217

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Corohmni

South Africa . 254 parts In-Stock

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$34.400

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254

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Kulean Microsystems

USA . 5,949 parts In-Stock

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SupplyDigital Components

Austria . 3,586 parts In-Stock

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Problanco Electronics

Mexico . 2,738 parts In-Stock

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TANS Electronics

Latvia . 2,604 parts In-Stock

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Argo Parts USA

USA . 1,836 parts In-Stock

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Continental Prestige Electronics

USA . 952 parts In-Stock

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952

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Corphita

USA . 951 parts In-Stock

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Perfect Parts

USA . 93 parts In-Stock

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GreenTree Electronics

Israel . 83 parts In-Stock

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UHIMA Technologies

Türkiye . 41 parts In-Stock

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Overview

Capture the essence of every moment with the AR0147ATSC00XUEA0-DRBR by Onsemi, a cutting-edge image sensor that guarantees unparalleled quality and precision. Manufactured by Onsemi, a renowned leader in the industry, this sensor is designed to elevate your imaging experience to new heights. Ideal for a wide range of applications, this sensor offers exceptional value and benefits, including a dynamic range of 140 dB and a maximum operating temperature of 110°C. Revolutionize your imaging projects with the AR0147ATSC00XUEA0-DRBR and discover a world of endless possibilities today.

Feature Benefit Bullets

Pixel Size (um): 3X3

This small pixel size allows for high resolution images to be captured with better detail and clarity.

Maximum Supply Voltage: 1.26 V

The low maximum supply voltage ensures power efficiency and helps in reducing energy consumption.

Master Clock: 50 MHz

The high master clock frequency enables quick image processing and data transfer.

Body Width: 9 inch

The compact body width makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors provide high image quality, low power consumption, and fast data readout, making them a popular choice in modern digital imaging devices.

Package Shape or Style: SQUARE

The square package shape makes it easier to mount and align the image sensor accurately in different applications.

Minimum Supply Voltage: 1.14 V

The low minimum supply voltage allows for operation in a wide range of power supply conditions.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature ensures reliability and performance in harsh environmental conditions.

Horizontal Pixel: 1344

The high horizontal pixel count allows for capturing detailed images with high resolution and clarity.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies interface with digital processing systems and reduces noise interference.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for usage in extreme cold conditions without performance degradation.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The use of tin, silver, and copper for terminal finish ensures good electrical conductivity and corrosion resistance.

Maximum Operating Current: 540 mA

The high maximum operating current indicates the capability to handle high data processing loads efficiently.

Dynamic Range: 140 dB

The wide dynamic range allows for capturing both bright and dark areas in an image accurately without losing details.

Vertical Pixel: 968

The high vertical pixel count complements the horizontal pixel count for capturing detailed images with good resolution.

Body Length/Diameter: 9 mm

The compact body length makes it suitable for use in space-constrained applications without compromising performance.

Optical Format (inch): 1/4

The 1/4 inch optical format provides compatibility with a wide range of lenses and optical systems for versatile usage.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for stable operation.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and integration with other systems for seamless operation.

Frame Rate: 60 fps

The high frame rate of 60 frames per second allows for capturing fast-moving objects and real-time video recording.

Array Type: FRAME

The frame array type offers consistency in image capture and processing, ensuring uniform image quality across the entire sensor.

Sensitivity (V/lx.s): 30.7 V/lx.s

The high sensitivity value enables the image sensor to capture clear and bright images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration into various devices and systems.

Technical Specifications

Image Sensors AR0147ATSC00XUEA0-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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