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NOIP3SE5000A-LTI

Onsemi

NOIP3SE5000A-LTI by Onsemi

NOIP3SE5000A-LTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592 (H) x 2048 (V) pixels, operating at 45 fps. It has a dynamic range of 60 dB and spectral response of 400-1000 nm. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,640 parts In-Stock

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Digiode

USA . 1,964 parts In-Stock

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AZTECH Wire

Italy . 1,108 parts In-Stock

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$8.400

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Kulean Microsystems

USA . 6,038 parts In-Stock

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Problanco Electronics

Mexico . 5,164 parts In-Stock

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TANS Electronics

Latvia . 4,842 parts In-Stock

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SupplyDigital Components

Austria . 3,466 parts In-Stock

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Corphita

USA . 1,038 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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UHIMA Technologies

Türkiye . 53 parts In-Stock

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Overview

Experience superior image quality and reliability with the NOIP3SE5000A-LTI by Onsemi. As a leading manufacturer in the industry, Onsemi's Image Sensors are known for their precision and cutting-edge technology. This sensor is ideal for a wide range of applications, offering customers unmatched value and performance. Say goodbye to blurry images and hello to crystal-clear visuals with the NOIP3SE5000A-LTI. Elevate your imaging experience today!

Feature Benefit Bullets

Pixel Size (um) 4.8X4.8

Higher pixel size allows for more light to be captured, resulting in better image quality.

Maximum Supply Voltage 1.9 V

Allows for efficient power usage and prevents potential damage from overvoltage.

Master Clock 360 MHz

High master clock frequency enables fast data processing and readout speed.

Body Width 19 inch

Compact size makes it easy to integrate into different devices or systems.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high sensitivity, making them suitable for various applications.

Package Shape or Style SQUARE

Square shape provides efficient use of space and allows for easy mounting and integration.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage enables energy efficiency and extends battery life.

Maximum Operating Temperature 85 °C

High operating temperature range allows for use in various environmental conditions.

Horizontal Pixel 2592

High horizontal pixel count provides detailed and high-resolution images.

Minimum Operating Temperature -40 °C

Wide temperature range ensures reliable performance in extreme cold conditions.

Dynamic Range 60 dB

Wide dynamic range captures both bright and dark areas accurately in an image.

Vertical Pixel 2048

High vertical pixel count contributes to the overall resolution and image quality.

Body Length/Diameter 19 mm

Compact body size allows for versatile mounting options and easy integration.

Spectral Response (nm) 400-1000

Broad spectral response enables capturing images across a wide range of wavelengths.

Termination Type SOLDER

Solder termination provides secure and reliable electrical connections.

Output Interface Type 4-WIRE INTERFACE

4-wire interface offers fast data transmission and reliable communication.

Frame Rate 45 fps

High frame rate allows for smooth and clear video recording.

Array Type FRAME

Frame array type provides efficient image capture and processing capabilities.

Sensitivity (V/lx.s) 7.5 V/lx.s

High sensitivity ensures accurate image capture even in low-light conditions.

Mounting Feature SURFACE MOUNT

Surface mount feature makes it easy to install and secure the sensor onto a surface.

Technical Specifications

Image Sensors NOIP3SE5000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

45 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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