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CYIS1SM0250AA-WWC

Onsemi

CYIS1SM0250AA-WWC by Onsemi

CYIS1SM0250AA-WWC by Onsemi is a CMOS image sensor with 25um pixel size. It operates at 3.3-5V, has an 8MHz master clock, and offers a dynamic range of 74dB. Ideal for applications requiring high-resolution imaging at up to 30fps frame rate in a surface-mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,134 parts In-Stock

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Digiode

USA . 1,081 parts In-Stock

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Native Components

USA . 805 parts In-Stock

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$6.700

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805

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Problanco Electronics

Mexico . 5,820 parts In-Stock

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SupplyDigital Components

Austria . 3,392 parts In-Stock

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Kulean Microsystems

USA . 2,567 parts In-Stock

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Corphita

USA . 2,485 parts In-Stock

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Northwest PG Solutions

USA . 1,848 parts In-Stock

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TANS Electronics

Latvia . 1,811 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Experience crystal clear imaging like never before with the CYIS1SM0250AA-WWC Image Sensor by Onsemi. With a pixel size of 25um and a maximum supply voltage of 5V, this cutting-edge sensor delivers unparalleled image quality and accuracy. Onsemi's reputation for excellence ensures that you're getting a product that meets the highest industry standards. From surveillance systems to medical imaging, this sensor is versatile and reliable, providing value and benefits to customers in a wide range of applications. Elevate your imaging experience with the CYIS1SM0250AA-WWC Image Sensor today.

Feature Benefit Bullets

Pixel Size (um): 25

Smaller pixel size allows for higher resolution images and better detail.

Maximum Supply Voltage: 5 V

Provides sufficient power for optimal performance of the image sensor.

Master Clock: 8 MHz

High master clock frequency enables faster data processing and improved image capture speed.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality, making them a popular choice in various applications.

Package Shape or Style: RECTANGULAR

Rectangular package design allows for easy integration and placement in electronic devices.

Minimum Supply Voltage: 3.3 V

Lower minimum supply voltage helps in reducing power consumption and extending battery life in portable devices.

Maximum Operating Temperature: 65 °C

Wide operating temperature range ensures reliable performance even in challenging environmental conditions.

Horizontal Pixel: 512

High horizontal pixel count enables capturing detailed images with better clarity.

Output Range: 1-4.25V

Wide output range provides flexibility in signal processing and compatibility with various other components.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures the image sensor can function in cold environments without issues.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

Gold terminal finish with nickel barrier offers good conductivity and corrosion resistance for reliable connections.

Dynamic Range: 74 dB

High dynamic range helps in capturing a wide range of light intensities and producing well-balanced images.

Vertical Pixel: 512

High vertical pixel count contributes to detailed image capture and improved image quality.

Data Rate: 8 Mbps

High data rate allows for quick transmission of image data for real-time applications.

Termination Type: SOLDER

Solder termination provides a reliable and durable connection for the image sensor.

Frame Rate: 30 fps

High frame rate enables smooth video recording and fast-paced image capture.

Array Type: FULL FRAME

Full frame array type ensures maximum light sensitivity and image quality across the entire sensor surface.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on PCBs, saving space and simplifying assembly.

Technical Specifications

Image Sensors CYIS1SM0250AA-WWC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC SHUTTER

Array Type:

FULL FRAME

Data Rate:

8 Mbps

Dynamic Range:

74 dB

Frame Rate:

30 fps

Horizontal Pixel:

512

JESD-609 Code:

e4

Master Clock:

8 MHz

Mounting Feature:

Maximum Operating Temperature:

65 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

25

Sensors or Transducers Type:

Maximum Supply Voltage:

5 V

Minimum Supply Voltage:

3.3 V

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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