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NOIP1FN025KA-GDI

Onsemi

NOIP1FN025KA-GDI by Onsemi

NOIP1FN025KA-GDI by Onsemi is an image sensor with 4.5x4.5 um pixel size, 360 MHz master clock, and 5120x5120 resolution. It operates b/w -40 to 85 °C and has a dynamic range of 59 dB. Ideal for high-resolution imaging applications requiring fast frame rates up to 80 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 8,972 parts In-Stock

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Digiode

USA . 323 parts In-Stock

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AZTECH Wire

Italy . 334 parts In-Stock

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$14.420

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Problanco Electronics

Mexico . 5,230 parts In-Stock

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Kulean Microsystems

USA . 3,183 parts In-Stock

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TANS Electronics

Latvia . 1,381 parts In-Stock

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Corohmni

South Africa . 417 parts In-Stock

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Corphita

USA . 156 parts In-Stock

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Perfect Parts

USA . 121 parts In-Stock

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SupplyDigital Components

Austria . 117 parts In-Stock

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UHIMA Technologies

Türkiye . 113 parts In-Stock

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Overview

Capture stunning images with the NOIP1FN025KA-GDI image sensor from Onsemi. Known for their superior quality and reliability, Onsemi's image sensors are trusted by professionals in a variety of industries. Whether you're working in security, automotive, or consumer electronics, this sensor delivers exceptional performance and precision. With a wide range of applications and advanced features, this sensor provides unmatched value and versatility. Elevate your projects with the innovative technology and benefits offered by the NOIP1FN025KA-GDI from Onsemi.

Feature Benefit Bullets

Pixel Size (um) 4.5X4.5

Small pixel size allows for high resolution and detailed imaging.

Maximum Supply Voltage 1.9 V

Low supply voltage helps in reducing power consumption and heat generation.

Master Clock 360 MHz

High master clock frequency enables fast processing of image data.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low power consumption, making them suitable for a wide range of applications.

Minimum Operating Temperature -40 °C

Wide operating temperature range allows the sensor to be used in various environmental conditions.

Dynamic Range 59 dB

High dynamic range ensures accurate capture of both bright and dark areas in an image.

Frame Rate 80 fps

High frame rate enables smooth and high-quality video capture.

Array Type FRAME

Frame array design allows for efficient image processing and data transfer.

Output Interface Type 4-WIRE INTERFACE

4-wire interface provides reliable and fast data communication.

Mounting Feature THROUGH HOLE MOUNT

Through-hole mounting ensures secure and stable installation of the sensor.

Technical Specifications

Image Sensors NOIP1FN025KA-GDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

36.1 inch

Body Height:

3.5 mm

Body Length/Diameter:

43.1 mm

Dynamic Range:

59 dB

Frame Rate:

80 fps

Horizontal Pixel:

5120

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.28

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensitivity (V/lx.s):

5.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

5120

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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