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NOIX2SN8000B-LTI

Onsemi

NOIX2SN8000B-LTI by Onsemi

NOIX2SN8000B-LTI by Onsemi is an Image Sensor with 3.2X3.2 um pixel size, 32.4 MHz master clock, and 1/1.1 inch optical format. Ideal for applications requiring high-resolution imaging at a max operating temperature of 85 °C, offering a dynamic range of 68 dB and I2C/SPI interface for digital voltage output.

Median Price

$332.969

Lifecycle Status

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Kulean Microsystems

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Problanco Electronics

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Overview

Capture every detail with the NOIX2SN8000B-LTI Image Sensor by Onsemi, a leading manufacturer known for top-notch quality and reliability. Ideal for applications requiring high-resolution imaging, this sensor offers unparalleled performance and precision. With a wide range of features and a sleek design, this product provides customers with exceptional value and benefits. Elevate your projects to the next level with the NOIX2SN8000B-LTI - the ultimate choice for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um) 3.2X3.2

Small pixel size allows for high resolution images to be captured with clear details.

Maximum Supply Voltage 1.3 V

Low power consumption due to the low maximum supply voltage.

Master Clock 32.4 MHz

High master clock frequency enables fast image capture and processing.

Body Width 19.9 inch

Compact size makes it suitable for integration into various devices or systems.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS sensors provide good image quality and low power consumption.

Minimum Supply Voltage 1.1 V

Efficient power usage with a low minimum supply voltage requirement.

Maximum Operating Temperature 85 °C

Can operate in a wide temperature range, suitable for different environments.

Horizontal Pixel 4096

High pixel count allows for detailed and high-resolution images to be captured.

Output Range 0.4-1.5V

Provides a wide output range for flexibility in signal processing and image adjustment.

Output Type DIGITAL VOLTAGE

Digital output is easy to interface with other digital systems for image processing.

Minimum Operating Temperature -40 °C

Capable of functioning in extreme cold temperatures.

Maximum Operating Current 240 mA

Low operating current allows for efficient power usage.

Housing CERAMIC, METAL-SEALED COFIRED

Durable housing material protects the sensor in various operating conditions.

Dynamic Range 68 dB

High dynamic range enables the capture of both bright and dark details in an image.

Vertical Pixel 2160

High pixel count in the vertical direction for detailed image capture.

Body Length/Diameter 20.88 mm

Compact body size for easy integration and installation.

Spectral Response (nm) 300-1000

Wide spectral response range for capturing images across different wavelengths of light.

Optical Format (inch) 1/1.1

Standard optical format for compatibility with various lenses and optical systems.

Termination Type SOLDER

Solder termination for secure and reliable connection in the circuit.

Output Interface Type I2C/SPI INTERFACE

Flexible output interface options for easy integration with different systems.

Frame Rate 80 fps

High frame rate allows for smooth and detailed video capture.

Array Type FRAME

Frame array design for capturing multiple frames quickly and efficiently.

Mounting Feature SURFACE MOUNT

Easy to mount on a surface for secure installation in devices or systems.

Technical Specifications

Image Sensors NOIX2SN8000B-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

80 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

2160

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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