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NOIX1SN012KB-LTI

Onsemi

NOIX1SN012KB-LTI by Onsemi

NOIX1SN012KB-LTI by Onsemi is an Image Sensor with 3.2X3.2 um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras or imaging devices.

Median Price

$516.270

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 25 parts In-Stock

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$516.270

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25

$516.270

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Chip1Stop

Japan . 17 parts In-Stock

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$1,640.000

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17

$1,640.000

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Avnet

USA . 25 parts In-Stock

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$105.776

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25

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$105.776

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Distributors (In-Stock)

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Digiode

USA . 1,082 parts In-Stock

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$547.096

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1,082

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Vyrian

USA . 10,565 parts In-Stock

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10,565

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Distributors (Availability)

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Corphita

USA . 2,339 parts In-Stock

1+ parts

$518.301

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2,339

$518.301

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Corohmni

South Africa . 248 parts In-Stock

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$575.890

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248

$575.890

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TANS Electronics

Latvia . 8,065 parts In-Stock

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8,065

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SupplyDigital Components

Austria . 7,590 parts In-Stock

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7,590

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Kulean Microsystems

USA . 5,307 parts In-Stock

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UHIMA Technologies

Türkiye . 583 parts In-Stock

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583

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Perfect Parts

USA . 439 parts In-Stock

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439

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GreenTree Electronics

Israel . 117 parts In-Stock

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117

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Problanco Electronics

Mexico . 52 parts In-Stock

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Overview

Elevate your imaging capabilities with the NOIX1SN012KB-LTI image sensor by Onsemi. Crafted with precision and expertise, this sensor offers unparalleled quality and performance in capturing crystal-clear images. Perfect for a wide range of applications, this sensor delivers exceptional value by providing high-resolution images with a dynamic range of 68 dB. Experience the advantages of advanced technology and innovation in image sensing with Onsemi's NOIX1SN012KB-LTI.

Feature Benefit Bullets

Pixel Size (um) - 3.2X3.2

Small pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage - 1.3 V

Low supply voltage helps in reducing power consumption and heat generation.

Master Clock - 32.4 MHz

High master clock frequency enables fast processing and quick image capture.

Body Width - 19.9 inch

Compact body size makes it suitable for various applications requiring space efficiency.

Sensors or Transducers Type - IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low power consumption compared to other sensor types.

Package Shape or Style - RECTANGULAR

Rectangular package design simplifies the integration and mounting process.

Minimum Supply Voltage - 1.1 V

Low minimum supply voltage helps in optimizing power efficiency even in low-power scenarios.

Maximum Operating Temperature - 85 °C

Wide operating temperature range ensures performance under varying environmental conditions.

Horizontal Pixel - 4096

High horizontal pixel count enables high-resolution and detailed image capture.

Output Range - 0.4-1.5V

Wide output range provides flexibility in signal processing and adjustment.

Output Type - DIGITAL VOLTAGE

Digital voltage output simplifies data transmission and processing.

Minimum Operating Temperature - -40 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Maximum Operating Current - 240 mA

Moderate operating current ensures power efficiency in various operational scenarios.

Housing - CERAMIC, METAL-SEALED COFIRED

Robust housing design offers protection against environmental factors and mechanical stress.

Dynamic Range - 68 dB

High dynamic range allows capturing images with a wide range of brightness levels.

Vertical Pixel - 3072

High vertical pixel count contributes to image sharpness and detail.

Body Length/Diameter - 20.88 mm

Compact body size facilitates easy integration and compatibility with various systems.

Spectral Response (nm) - 300-1000

Wide spectral response range enables capturing images across various wavelengths of light.

Termination Type - SOLDER

Solder termination ensures secure and reliable connections for consistent performance.

Output Interface Type - I2C/SPI INTERFACE

I2C/SPI interface provides easy communication and compatibility with a wide range of systems.

Frame Rate - 90 fps

High frame rate enables capturing fast-moving subjects with smooth video output.

Array Type - FRAME

Frame array design facilitates organized image capture and processing.

Mounting Feature - SURFACE MOUNT

Surface mount feature simplifies installation and promotes compact system design.

Technical Specifications

Image Sensors NOIX1SN012KB-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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