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NOIX1SF012KB-LTI1

Onsemi

NOIX1SF012KB-LTI1 by Onsemi

NOIX1SF012KB-LTI1 by Onsemi is an Image Sensor with 3.2X3.2 um Pixel Size, 32.4 MHz Master Clock, and 4096 Horizontal Pixels. Ideal for applications requiring high-resolution imaging such as surveillance systems, industrial cameras, and medical imaging equipment due to its superior performance and digital output interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 4,104 parts In-Stock

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Digiode

USA . 1,819 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 5,923 parts In-Stock

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Problanco Electronics

Mexico . 1,224 parts In-Stock

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SupplyDigital Components

Austria . 1,118 parts In-Stock

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UHIMA Technologies

Türkiye . 975 parts In-Stock

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Corphita

USA . 870 parts In-Stock

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Kulean Microsystems

USA . 605 parts In-Stock

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South Africa . 390 parts In-Stock

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Overview

Experience the cutting-edge technology of the NOIX1SF012KB-LTI1 by Onsemi, a high-quality image sensor designed to elevate your projects to the next level. Onsemi is a renowned manufacturer known for their innovation and reliability in the industry. Ideal for a wide range of applications, this image sensor offers unparalleled value with its impressive features and benefits. Unlock new possibilities with crisp images, fast frame rates, and a wide dynamic range. Embrace superior performance and precision with the NOIX1SF012KB-LTI1, setting a new standard in image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Higher pixel size allows for better resolution and image quality

Maximum Supply Voltage: 1.3 V

Low power consumption and safe operating voltage

Master Clock: 32.4 MHz

High clock frequency for fast image processing

Body Width: 19.9 inch

Compact size for easy integration into devices

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS technology ensures low power consumption and high-quality images

Minimum Operating Temperature: -40 °C

Wide operating temperature range for versatile applications

Output Interface Type: I2C/SPI INTERFACE

Multiple interface options for flexible connectivity

Frame Rate: 90 fps

High frame rate for capturing fast-moving objects

Technical Specifications

Image Sensors NOIX1SF012KB-LTI1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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