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NOIX1SE012KB-LTI

Onsemi

NOIX1SE012KB-LTI by Onsemi

NOIX1SE012KB-LTI by Onsemi is an Image Sensor with 3.2x3.2 um pixel size, 32.4 MHz master clock, and 4096 horizontal pixels. Ideal for applications requiring a digital voltage output interface, such as frame arrays in cameras or imaging devices.

Median Price

$1,800.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 21 parts In-Stock

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$1,800.000

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Digiode

USA . 2,116 parts In-Stock

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$419.121

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$419.121

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Vyrian

USA . 7,524 parts In-Stock

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7,524

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Flip Electronics

USA . 30 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,482 parts In-Stock

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$397.062

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Corohmni

South Africa . 271 parts In-Stock

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$441.180

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271

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Kulean Microsystems

USA . 8,187 parts In-Stock

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TANS Electronics

Latvia . 7,338 parts In-Stock

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SupplyDigital Components

Austria . 4,142 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Problanco Electronics

Mexico . 1,403 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Perfect Parts

USA . 71 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Overview

Unlock the power of crystal-clear imaging with the NOIX1SE012KB-LTI by Onsemi. Crafted with precision and expertise, this cutting-edge Image Sensor is designed to revolutionize your visual experience. From enhancing security systems to improving medical equipment, this versatile device offers unmatched performance and reliability. Experience unparalleled image quality and seamless integration with the advanced features and innovative design of the NOIX1SE012KB-LTI. Elevate your projects to new heights with this exceptional product from a trusted manufacturer in the industry.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Higher resolution and finer details in images captured.

Maximum Supply Voltage: 1.3 V

Efficient power usage and compatibility with various systems.

Master Clock: 32.4 MHz

High-speed data processing for quick image capturing.

Body Width: 19.9 inch

Compact design for easy integration into devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology for low power consumption and high image quality.

Package Shape or Style: RECTANGULAR

Convenient form factor for mounting and assembly.

Minimum Supply Voltage: 1.1 V

Operates efficiently even at lower voltage levels.

Maximum Operating Temperature: 85 °C

Suitable for use in a wide range of environmental conditions.

Horizontal Pixel: 4096

High pixel count for detailed and sharp images.

Output Range: 0.4-1.5V

Precise output voltage range for accurate data transmission.

Output Type: DIGITAL VOLTAGE

Digital output for easy connectivity and processing.

Minimum Operating Temperature: -40 °C

Can function in extreme cold environments without issue.

Maximum Operating Current: 240 mA

Efficient power usage and low operational costs.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable and reliable housing for long-lasting performance.

Dynamic Range: 68 dB

Wide dynamic range for capturing both bright and dark areas effectively.

Vertical Pixel: 3072

High pixel count for detailed images in vertical orientation.

Body Length/Diameter: 20.88 mm

Compact size for versatile mounting options.

Spectral Response (nm): 300-1000

Wide spectral range for capturing various types of light.

Termination Type: SOLDER

Secure and reliable connections for stable performance.

Output Interface Type: I2C/SPI INTERFACE

Versatile output interface for easy integration with different systems.

Frame Rate: 90 fps

High frame rate for smooth and fluid video recording.

Array Type: FRAME

Array structure for efficient image capturing and processing.

Mounting Feature: SURFACE MOUNT

Easy and secure mounting on PCBs and other surfaces.

Technical Specifications

Image Sensors NOIX1SE012KB-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

4096

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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