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NOIX1SE9400B-LTI

Onsemi

NOIX1SE9400B-LTI by Onsemi

NOIX1SE9400B-LTI by Onsemi is an Image Sensor with 3.2X3.2 um Pixel Size, 32.4 MHz Master Clock, and 3072 Horizontal Pixels. Ideal for applications requiring high-resolution imaging in a compact form factor, such as surveillance cameras or industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,345 parts In-Stock

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Digiode

USA . 1,363 parts In-Stock

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Flip Electronics

USA . 75 parts In-Stock

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AZTECH Wire

Italy . 272 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,124 parts In-Stock

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Problanco Electronics

Mexico . 7,068 parts In-Stock

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SupplyDigital Components

Austria . 6,952 parts In-Stock

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Kulean Microsystems

USA . 4,921 parts In-Stock

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Corphita

USA . 1,953 parts In-Stock

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UHIMA Technologies

Türkiye . 207 parts In-Stock

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Corohmni

South Africa . 58 parts In-Stock

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Overview

Experience unparalleled image quality and precision with the NOIX1SE9400B-LTI by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch performance and reliability in their Image Sensors. Ideal for a wide range of applications, this cutting-edge sensor offers unmatched value and benefits to customers looking for superior imaging solutions. Transform your projects with the exceptional quality and advanced features of the NOIX1SE9400B-LTI, taking your work to the next level.

Feature Benefit Bullets

Pixel Size (um): 3.2X3.2

Small pixel size allows for high resolution imaging and capturing detailed images.

Maximum Supply Voltage: 1.3 V

Efficient power consumption at a moderate voltage level.

Master Clock: 32.4 MHz

High clock speed enables fast data processing and imaging.

Body Width: 19.9 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology for high-quality image capture and low power consumption.

Package Shape or Style: RECTANGULAR

Standard shape for easy handling and mounting.

Minimum Supply Voltage: 1.1 V

Low power operation at a minimal voltage level.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatile applications.

Output Range: 0.4-1.5V

Varied output voltage range for flexibility in signal processing.

Output Type: DIGITAL VOLTAGE

Digital output for easy integration and compatibility with other digital systems.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme low-temperature environments.

Maximum Operating Current: 240 mA

Moderate operating current requirement for efficient power consumption.

Housing: CERAMIC, METAL-SEALED COFIRED

Durable housing materials for protection and longevity of the sensor.

Dynamic Range: 68 dB

High dynamic range for capturing both bright and dark areas in images.

Vertical Pixel: 3072

High vertical pixel count for detailed image capture.

Body Length/Diameter: 20.88 mm

Compact design for easy integration and space-saving.

Spectral Response (nm): 300-1000

Wide spectral response range for capturing various light wavelengths.

Optical Format (inch): 1/1.2

Standard optical format for compatibility with various optics.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: I2C/SPI INTERFACE

Multiple output interface options for versatile connectivity.

Frame Rate: 90 fps

High frame rate for smooth and real-time imaging.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure mounting in devices.

Technical Specifications

Image Sensors NOIX1SE9400B-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.7 V TO 2.9V

Array Type:

FRAME

Body Width:

19.9 inch

Body Height:

2.54 mm

Body Length/Diameter:

20.88 mm

Dynamic Range:

68 dB

Frame Rate:

90 fps

Horizontal Pixel:

3072

Housing:

CERAMIC, METAL-SEALED COFIRED

Master Clock:

32.4 MHz

Mounting Feature:

Maximum Operating Current:

240 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.2

Output Interface Type:

I2C/SPI INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.2X3.2

Sensors or Transducers Type:

Spectral Response (nm):

300-1000

Maximum Supply Voltage:

1.3 V

Minimum Supply Voltage:

1.1 V

Termination Type:

SOLDER

Vertical Pixel:

3072

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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