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KAE-04472-FBA-SD-EE

Onsemi

KAE-04472-FBA-SD-EE by Onsemi

KAE-04472-FBA-SD-EE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 2096 horizontal and vertical pixels, and a dynamic range of 92 dB. It operates b/w -50 to 60 °C, outputs current, and has a data rate of 40 Mbps. Ideal for applications requiring high-quality imaging at 24 fps frame rate in a rectangular package shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 874 parts In-Stock

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Vyrian

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TANS Electronics

Latvia . 7,890 parts In-Stock

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Kulean Microsystems

USA . 4,256 parts In-Stock

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SupplyDigital Components

Austria . 3,012 parts In-Stock

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Corphita

USA . 1,228 parts In-Stock

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Problanco Electronics

Mexico . 510 parts In-Stock

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UHIMA Technologies

Türkiye . 177 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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Overview

Capture the world in stunning clarity with the KAE-04472-FBA-SD-EE by Onsemi. As a leader in image sensor technology, Onsemi delivers top-notch quality and reliability. This innovative CCD image sensor offers a wide range of applications, from professional photography to industrial imaging. With its high dynamic range and fast data rate, this sensor provides exceptional performance in any environment. Trust Onsemi to bring your visions to life with the KAE-04472-FBA-SD-EE. Elevate your imagery and explore endless possibilities with this cutting-edge product.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Provides high resolution and clarity in capturing images.

Maximum Supply Voltage: 15.3 V

Allows for efficient power usage.

Body Width: 41 inch

Compact size for easy integration into devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensor technology ensures high quality image output.

Body Height: 5.62 mm

Slim design for versatile mounting options.

Package Shape or Style: RECTANGULAR

Sleek design for a modern aesthetic.

Minimum Supply Voltage: 14.7 V

Operates efficiently even at lower voltages.

Maximum Operating Temperature: 60 °C

Can withstand high temperatures for reliable performance.

Horizontal Pixel: 2096

High pixel count for detailed image capture.

Output Type: CURRENT OUTPUT

Provides accurate and real-time image output.

Housing: GLASS

Durable housing material for long-lasting use.

Dynamic Range: 92 dB

Offers a wide range of tonal values for vibrant images.

Vertical Pixel: 2096

Equal vertical and horizontal pixel count for balanced image quality.

Body Length/Diameter: 43.5 mm

Compact design for easy installation and integration.

Optical Format (inch): 4/3

Standard optical format for compatibility with various lenses.

Data Rate: 40 Mbps

High data rate for quick image transfer and processing.

Termination Type: SOLDER

Secure termination for reliable connections.

Frame Rate: 24 fps

Standard frame rate for smooth video recording.

Array Type: INTERLINE

Interline array structure for efficient light capture.

Mounting Feature: THROUGH HOLE MOUNT

Convenient mounting feature for easy installation.

Technical Specifications

Image Sensors KAE-04472-FBA-SD-EE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 45 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

41 inch

Body Height:

5.62 mm

Body Length/Diameter:

43.5 mm

Data Rate:

40 Mbps

Dynamic Range:

92 dB

Frame Rate:

24 fps

Horizontal Pixel:

2096

Housing:

GLASS

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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