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AR0220AT3C00XUEA0-DRBR-E

Onsemi

AR0220AT3C00XUEA0-DRBR-E by Onsemi

Onsemi's AR0220AT3C00XUEA0-DRBR-E is a CMOS image sensor with 4.2x4.2 um pixel size, 50 MHz master clock, and 120 dB dynamic range. Ideal for applications requiring high-resolution imaging at up to 60 fps in a compact rectangular package measuring 12mm x 9 inch x 1.65 mm.

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Digiode

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Native Components

USA . 975 parts In-Stock

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Northwest PG Solutions

USA . 887 parts In-Stock

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TANS Electronics

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Problanco Electronics

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Corphita

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SupplyDigital Components

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Corohmni

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UHIMA Technologies

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Kulean Microsystems

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Overview

Capture the world in stunning clarity with the AR0220AT3C00XUEA0-DRBR-E image sensor by Onsemi. Designed for high-performance applications, this CMOS sensor offers a superior pixel size of 4.2x4.2 um and an impressive dynamic range of 120 dB. Perfect for a wide range of imaging solutions, from automotive to industrial applications, this sensor delivers exceptional quality and reliability. Trust Onsemi's reputation for excellence and unlock the full potential of your imaging projects with the AR0220AT3C00XUEA0-DRBR-E.

Feature Benefit Bullets

Pixel Size (um): 4.2X4.2

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 1.26 V

Efficient power consumption with a relatively low maximum supply voltage.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 9 inch

Compact body size makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology provides high-quality imaging with low power consumption.

Body Height: 1.65 mm

Low-profile design for flexible mounting options in space-constrained applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape offers easy integration and alignment within systems.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage for energy-efficient operation in a wide range of devices.

Maximum Operating Temperature: 105 °C

Wide operating temperature range for reliable performance in various environments.

Horizontal Pixel: 1820

High horizontal pixel count for detailed and sharp image capture.

Output Type: DIGITAL VOLTAGE

Digital voltage output for easy interfacing with other digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish for long-term reliability and corrosion resistance.

Dynamic Range: 120 dB

High dynamic range for capturing a wide range of light intensities with accuracy.

Vertical Pixel: 940

Vertical pixel count contributes to the overall resolution and image quality.

Body Length/Diameter: 12 mm

Compact body size for easy integration and space-saving designs.

Optical Format (inch): 1/1.8

Standard optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination for secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 60 fps

High frame rate for smooth and high-quality video recording and streaming.

Array Type: FRAME

Frame array type for capturing images with accurate timing and synchronization.

Sensitivity (V/lx.s): 60.5 V/lx.s

High sensitivity for capturing clear and detailed images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount capability for easy and secure installation in surface-mounted applications.

Technical Specifications

Image Sensors AR0220AT3C00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO REQUIRES 2.8V NOMINAL SUPPLY

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.65 mm

Body Length/Diameter:

12 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1820

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.8

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.2X4.2

Sensitivity (V/lx.s):

60.5 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

940

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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