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KAI-16000-AXA-JP-AE

Onsemi

KAI-16000-AXA-JP-AE by Onsemi

KAI-16000-AXA-JP-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 4872 horizontal pixels, and 3248 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 65 dB. Ideal for applications requiring high-resolution imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 872 parts In-Stock

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872

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Digiode

USA . 627 parts In-Stock

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627

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Kulean Microsystems

USA . 7,668 parts In-Stock

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SupplyDigital Components

Austria . 4,536 parts In-Stock

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TANS Electronics

Latvia . 1,533 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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Problanco Electronics

Mexico . 540 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Corohmni

South Africa . 132 parts In-Stock

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Overview

Capture life's most precious moments with the KAI-16000-AXA-JP-AE image sensor by Onsemi. Crafted with precision and cutting-edge technology, this sensor delivers unrivaled quality and performance in capturing crystal-clear images. Ideal for a wide range of applications, from professional photography to industrial imaging, this sensor offers unparalleled value and versatility. Elevate your projects with the superior benefits and advantages that this product brings, making every capture a masterpiece. Trust Onsemi for excellence in image sensors.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution image capture, making this image sensor ideal for applications requiring detailed image quality.

Maximum Supply Voltage: 15.5 V

With a high maximum supply voltage, this image sensor can handle power fluctuations and ensure stable performance in varied operating conditions.

Body Width: 44.45 inch

The compact body width makes this image sensor easy to integrate into different devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

As a CCD image sensor, this product offers high sensitivity and low noise performance, making it suitable for applications where image quality is critical.

Package Shape or Style: RECTANGULAR

The rectangular package shape simplifies the mounting and integration process, providing flexibility in design and placement within devices.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption and helps extend the overall lifespan of the image sensor.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions and maintain performance reliability.

Horizontal Pixel: 4872

The high horizontal pixel count allows for wide image capture, providing detailed and clear visuals for enhanced image quality.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures the image sensor can perform in cold environments without compromising functionality.

Dynamic Range: 65 dB

The wide dynamic range enables the image sensor to capture both bright and dark areas accurately, resulting in high-quality images with balanced exposure.

Vertical Pixel: 3248

The vertical pixel count contributes to the overall image resolution, allowing for clear and sharp images to be captured using this sensor.

Body Length/Diameter: 45.34 mm

The compact body length/diameter makes this image sensor suitable for various applications where space constraints are a consideration.

Data Rate: 30 Mbps

With a high data rate, this image sensor can efficiently process and transmit image data, enabling real-time image capture and analysis.

Termination Type: SOLDER

The solder termination type simplifies the assembly process, ensuring a secure and reliable connection for effective operation.

Array Type: INTERLINE

The interline array type offers fast readout speeds and high sensitivity, making this image sensor suitable for applications requiring quick image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature provides stability and secure installation of the image sensor, making it suitable for rugged environments or applications that require durable mounting solutions.

Technical Specifications

Image Sensors KAI-16000-AXA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

4.88 mm

Body Length/Diameter:

45.34 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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