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KAI-08051-AXA-JD-AE

Onsemi

KAI-08051-AXA-JD-AE by Onsemi

Onsemi's KAI-08051-AXA-JD-AE image sensor features 5.5um pixel size, 3296H x 2472V resolution, and 66dB dynamic range. Ideal for applications requiring high-quality imaging in a compact form factor, such as industrial cameras or medical devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,691 parts In-Stock

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Kulean Microsystems

USA . 6,965 parts In-Stock

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Problanco Electronics

Mexico . 6,033 parts In-Stock

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TANS Electronics

Latvia . 4,992 parts In-Stock

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Corphita

USA . 1,488 parts In-Stock

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SupplyDigital Components

Austria . 546 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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Overview

Capture every detail with the KAI-08051-AXA-JD-AE image sensor by Onsemi. Renowned for its high-quality manufacturing and cutting-edge technology, this sensor is perfect for a wide range of applications. From industrial imaging to medical diagnostics, this sensor delivers exceptional performance and accuracy. Experience the value and benefits it offers, from its superior pixel size to its impressive dynamic range. Trust Onsemi for unparalleled quality and innovation in image sensors.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for capturing detailed images with high resolution.

Maximum Supply Voltage: 15.5 V

Higher supply voltage ensures better performance and stability of the image sensor.

Body Width: 29 inch

The compact body width makes it easier to integrate this image sensor into various devices.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality image capture and low noise performance.

Package Shape or Style: RECTANGULAR

The rectangular shape allows for efficient placement and mounting of the image sensor.

Minimum Supply Voltage: 14.5 V

The minimum supply voltage requirement indicates energy efficiency of the image sensor.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions.

Horizontal Pixel: 3296

This high horizontal pixel count ensures sharp and detailed images.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows for usage in extreme cold environments.

Dynamic Range: 66 dB

A wide dynamic range enables the image sensor to capture both bright and dark areas accurately.

Vertical Pixel: 2472

The high vertical pixel count contributes to the overall image quality and sharpness.

Body Length/Diameter: 40 mm

The compact body length allows for flexible installation options.

Optical Format (inch): 4/3

The 4/3 optical format provides a good balance between image quality and sensor size.

Termination Type: SOLDER

Solder terminations ensure secure and reliable connections for the image sensor.

Array Type: INTERLINE

Interline array design offers fast readout speed for continuous image capturing.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and enhances stability.

Technical Specifications

Image Sensors KAI-08051-AXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 39 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3296

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2472

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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