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MT9V034C12STM

Onsemi

MT9V034C12STM by Onsemi

The Onsemi MT9V034C12STM is a 1/3-inch CMOS image sensor with 6x6 um pixel size, offering 752 (H) x 480 (V) resolution and a dynamic range of 110 dB. Operating at temperatures from -30 to 70°C, it has a max supply voltage of 3.6 V and supports a master clock of 27 MHz. Ideal for applications requiring high-quality imaging at up to 60 fps.

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Vyrian

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Nova Conductors

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Pegasus Components GmbH

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AZTECH Wire

Italy . 860 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Problanco Electronics

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TANS Electronics

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Argo Parts USA

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Continental Prestige Electronics

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Kulean Microsystems

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SupplyDigital Components

Austria . 889 parts In-Stock

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Corohmni

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Overview

Capture life's moments in stunning detail with the MT9V034C12STM image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that exceed expectations. This sensor is perfect for a wide range of applications, providing crystal-clear images with its 752x480 resolution and 110 dB dynamic range. With a compact design and easy installation thanks to its surface mount feature, the MT9V034C12STM offers unparalleled value and performance. Upgrade your imaging capabilities today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size of 6X6 um allows for high resolution images with fine detail.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage of 3.6 V ensures stable and reliable operation of the image sensor.

Master Clock: 27 MHz

The fast master clock speed of 27 MHz enables quick image processing and high frame rates.

Power Supplies (V): 3.3

The power supply voltage of 3.3 V is common and easily accessible, making it convenient for various applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high sensitivity, making them ideal for capturing high-quality images.

Minimum Supply Voltage: 3 V

The low minimum supply voltage of 3 V helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures the sensor can withstand harsh environmental conditions.

Horizontal Pixel: 752

The high horizontal pixel count of 752 contributes to the sensor's high-resolution image capture capabilities.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30°C allows the sensor to be used in a wide range of environments.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability to protect the sensor from external factors.

Dynamic Range: 110 dB

The wide dynamic range of 110 dB allows the sensor to capture both bright and dark areas with excellent detail and accuracy.

Vertical Pixel: 480

The high vertical pixel count of 480 further enhances the sensor's image resolution and quality.

Optical Format (inch): 1/3

The 1/3 inch optical format is commonly used in many imaging applications, ensuring compatibility and ease of integration.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices, making it easier to integrate the sensor into different systems.

Frame Rate: 60 fps

The high frame rate of 60 fps allows for smooth and fluid motion capture, making it suitable for applications requiring fast image processing.

Mounting Feature: SURFACE MOUNT

The surface mount design makes installation and assembly of the sensor quick and easy, improving efficiency.

Technical Specifications

Image Sensors MT9V034C12STM attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DATA RATE IS 27 MP/S

Dynamic Range:

110 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Pixel Size (um):

6X6

Power Supplies (V):

3.3

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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