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KAI-16050-CXA-JD-B1

Onsemi

KAI-16050-CXA-JD-B1 by Onsemi

The Onsemi KAI-16050-CXA-JD-B1 is a 5.5x5.5 um CCD image sensor with 4896 (H) x 3264 (V) pixels, offering a dynamic range of 64 dB. It operates at temperatures ranging from -50 to 70 °C and requires a power supply of 15V. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,369 parts In-Stock

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2,369

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Vyrian

USA . 370 parts In-Stock

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370

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Problanco Electronics

Mexico . 8,351 parts In-Stock

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TANS Electronics

Latvia . 7,947 parts In-Stock

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SupplyDigital Components

Austria . 7,061 parts In-Stock

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Kulean Microsystems

USA . 4,724 parts In-Stock

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Corphita

USA . 1,631 parts In-Stock

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Corohmni

South Africa . 206 parts In-Stock

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-16050-CXA-JD-B1 by Onsemi. Crafted by a trusted manufacturer in the field of image sensors, this product offers unparalleled quality and reliability. Perfect for a wide range of applications, this image sensor delivers exceptional performance and precision. With its advanced features and cutting-edge technology, customers can expect superior results and unmatched value. Experience the benefits of the KAI-16050-CXA-JD-B1 and take your imaging projects to new heights.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for capturing detailed images with high resolution, making this product suitable for applications requiring precise image quality.

Body Width: 45.34 inch

The compact body width makes the image sensor easy to integrate into various devices or systems without taking up too much space.

Power Supplies (V): 15

The low power supply requirement of 15V makes this image sensor energy-efficient and suitable for applications where power consumption is a critical factor.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality image captures with low noise, making it ideal for applications where image clarity is essential.

Package Shape or Style: RECTANGULAR

The rectangular shape of the package allows for easy integration and stable mounting within devices or systems.

Maximum Operating Temperature: 70 °C

The wide operating temperature range of up to 70 °C ensures that this image sensor can perform reliably in various environmental conditions.

Horizontal Pixel: 4896

With a high horizontal pixel count of 4896, this image sensor can capture detailed and wide-angle images, suitable for applications requiring panoramic views.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature of -50 °C allows this image sensor to function in extremely cold environments without any performance issues.

Dynamic Range: 64 dB

A dynamic range of 64 dB indicates the range between the highest and lowest detectable signals, ensuring accurate imaging and clear representation of different light intensities.

Vertical Pixel: 3264

The vertical pixel count of 3264 ensures detailed image captures in the vertical axis, enhancing the overall image quality and allowing for precise analysis.

Body Length/Diameter: 47.24 mm

The compact body length/diameter makes this image sensor suitable for applications where space constraints are a concern, ensuring easy integration and installation.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable performance in various operating conditions, making this image sensor a durable choice.

Array Type: INTERLINE

With an interline array type, this image sensor offers fast readout speeds and reduced blooming effects, making it suitable for applications requiring high-speed image capture.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and stable installation of the image sensor onto PCBs or other surfaces, ensuring secure placement and reliable performance.

Technical Specifications

Image Sensors KAI-16050-CXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Length/Diameter:

47.24 mm

Dynamic Range:

64 dB

Horizontal Pixel:

4896

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Termination Type:

SOLDER

Vertical Pixel:

3264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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