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NOIL1SM4000A-GDC

Onsemi

NOIL1SM4000A-GDC by Onsemi

NOIL1SM4000A-GDC by Onsemi is an image sensor with 2048x2048 pixels, 12x12 um pixel size, and 33 MHz master clock. It operates b/w 0-60 °C and has a dynamic range of 90 dB. Ideal for digital output applications requiring high-resolution imaging in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,500 parts In-Stock

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Digiode

USA . 1,952 parts In-Stock

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AZTECH Wire

Italy . 483 parts In-Stock

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$12.380

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483

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SupplyDigital Components

Austria . 3,064 parts In-Stock

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Problanco Electronics

Mexico . 2,569 parts In-Stock

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TANS Electronics

Latvia . 1,857 parts In-Stock

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Kulean Microsystems

USA . 1,053 parts In-Stock

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Corphita

USA . 951 parts In-Stock

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951

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Corohmni

South Africa . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 312 parts In-Stock

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Overview

Capture every moment with the NOIL1SM4000A-GDC image sensor by Onsemi. This cutting-edge technology offers superior quality and performance, making it the perfect choice for a wide range of applications. With a sleek design and advanced features, this sensor provides unparalleled value and benefits to customers looking for reliable and precise imaging solutions. Trust Onsemi's expertise in manufacturing to deliver exceptional results every time.

Feature Benefit Bullets

Pixel Size (um): 12X12

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 2.75 V

Efficient power consumption with a higher supply voltage.

Master Clock: 33 MHz

High master clock frequency for fast image capturing and processing.

Body Width: 42 inch

Compact and slim design for easy integration into various devices.

Power Supplies (V): 2.5

Stable power supply for consistent and reliable performance.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology for high-quality imaging.

Body Height: 3.25 mm

Low profile design for space-saving installations.

Package Shape or Style: SQUARE

Square shape for easy mounting and alignment.

Minimum Supply Voltage: 2.25 V

Allows for operation at lower voltages for energy efficiency.

Maximum Operating Temperature: 60 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 2048

High horizontal pixel count for detailed images.

Output Type: DIGITAL OUTPUT

Digital output for easy data transfer and processing.

Minimum Operating Temperature: 0 °C

Can operate in cold temperatures without issues.

Terminal Finish: Matte Tin (Sn)

Matte tin finish for durable and reliable connections.

Maximum Operating Current: 200 mA

Low operating current for energy efficiency.

Housing: CERAMIC

Ceramic housing for durability and temperature resistance.

Dynamic Range: 90 dB

High dynamic range for capturing both bright and dark areas in an image.

Vertical Pixel: 2048

High vertical pixel count for detailed images.

Body Length/Diameter: 42 mm

Compact design for easy integration and space-saving installations.

Termination Type: SOLDER

Solder termination for secure and reliable connections.

Output Interface Type: 3-WIRE INTERFACE

3-wire interface for easy integration with other devices.

Frame Rate: 15 fps

Decent frame rate for capturing smooth and clear images.

Array Type: FRAME

Frame array type for organized and efficient image capture.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation on circuit boards.

Technical Specifications

Image Sensors NOIL1SM4000A-GDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

42 inch

Body Height:

3.25 mm

Body Length/Diameter:

42 mm

Dynamic Range:

90 dB

Frame Rate:

15 fps

Horizontal Pixel:

2048

Housing:

CERAMIC

JESD-609 Code:

e3

Master Clock:

33 MHz

Mounting Feature:

Maximum Operating Current:

200 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

12X12

Power Supplies (V):

2.5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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