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NOIL1SC4000A-GDC

Onsemi

NOIL1SC4000A-GDC by Onsemi

NOIL1SC4000A-GDC by Onsemi is a 2048x2048 CMOS image sensor with 12x12 um pixel size. It operates at 2.25-2.75 V, has a max clock of 33 MHz, and offers a dynamic range of 90 dB. Ideal for digital output applications in frame arrays with a frame rate of 15 fps.

Median Price

$2,112.570

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Arrow

USA . 14 parts In-Stock

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Chip1Stop

Japan . 14 parts In-Stock

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Verical

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Vyrian

USA . 5,843 parts In-Stock

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Digiode

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Corohmni

South Africa . 405 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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TANS Electronics

Latvia . 3,410 parts In-Stock

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Problanco Electronics

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Corphita

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UHIMA Technologies

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Overview

Experience unparalleled image quality with the NOIL1SC4000A-GDC by Onsemi, a leading manufacturer in the industry. This cutting-edge image sensor offers exceptional performance and reliability, making it ideal for a wide range of applications. Whether you're capturing stunning visuals for surveillance, medical imaging, or industrial automation, this sensor delivers crystal-clear images with crisp detail. Trust Onsemi to provide you with the best technology that exceeds your expectations. Elevate your projects with the NOIL1SC4000A-GDC and see the difference for yourself!

Feature Benefit Bullets

Pixel Size (um): 12X12

Small pixel size allows for high resolution images to be captured

Maximum Supply Voltage: 2.75 V

Offers a higher supply voltage for efficient power usage

Master Clock: 33 MHz

High master clock frequency enables fast image processing

Body Width: 42 inch

Compact body width for easy integration into various devices

Power Supplies (V): 2.5

Stable power supply of 2.5V ensures reliable performance

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology for high-quality image sensing capabilities

Body Height: 3.25 mm

Low profile body height for slim device designs

Package Shape or Style: SQUARE

Square package shape for easy mounting and alignment

Minimum Supply Voltage: 2.25 V

Low minimum supply voltage for energy-efficient operation

Maximum Operating Temperature: 60 °C

High maximum operating temperature for usage in various environments

Horizontal Pixel: 2048

High horizontal pixel count for detailed image capture

Output Type: DIGITAL OUTPUT

Digital output for easy data transfer and processing

Minimum Operating Temperature: 0 °C

Wide temperature range for operation in different conditions

Terminal Finish: Matte Tin (Sn)

Matte tin finish for improved durability and conductivity

Maximum Operating Current: 200 mA

Low operating current for energy-efficient performance

Housing: CERAMIC

Ceramic housing for robust protection and thermal stability

Dynamic Range: 90 dB

High dynamic range for capturing detailed images in varying light conditions

Vertical Pixel: 2048

High vertical pixel count for sharp image resolution

Body Length/Diameter: 42 mm

Compact body length/diameter for space-saving designs

Termination Type: SOLDER

Solder termination for secure electrical connections

Output Interface Type: 3-WIRE INTERFACE

3-wire interface for easy communication with other devices

Frame Rate: 15 fps

Decent frame rate for smooth video recording and image capture

Array Type: FRAME

Frame array type for efficient image sensing and processing

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation

Technical Specifications

Image Sensors NOIL1SC4000A-GDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

42 inch

Body Height:

3.25 mm

Body Length/Diameter:

42 mm

Dynamic Range:

90 dB

Frame Rate:

15 fps

Horizontal Pixel:

2048

Housing:

CERAMIC

JESD-609 Code:

e3

Master Clock:

33 MHz

Mounting Feature:

Maximum Operating Current:

200 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Output Interface Type:

3-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

12X12

Power Supplies (V):

2.5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Vertical Pixel:

2048

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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