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NOIL1SE3000A-GDC

Onsemi

NOIL1SE3000A-GDC by Onsemi

NOIL1SE3000A-GDC by Onsemi is an 8x8 um CMOS image sensor with a max supply voltage of 2.25V and master clock at 206 MHz. Ideal for applications requiring high-speed digital output, this rectangular package sensor offers a dynamic range of 80 dB and operates b/w temperatures of 0 to 60 °C.

Median Price

$2,209.250

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8 parts In-Stock

1+ parts

$1,771.670

100+ parts

$1,665.370

1k+ parts

$1,559.070

10k+ parts

-

8

$1,771.670

$1,665.370

$1,559.070

-

Verical

USA . 8 parts In-Stock

1+ parts

$2,209.250

100+ parts

$2,076.700

1k+ parts

$1,944.138

10k+ parts

-

8

$2,209.250

$2,076.700

$1,944.138

-

Chip1Stop

Japan . 14 parts In-Stock

1+ parts

$7,460.000

100+ parts

-

1k+ parts

-

10k+ parts

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14

$7,460.000

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 151 parts In-Stock

1+ parts

$1,954.416

100+ parts

-

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151

$1,954.416

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Vyrian

USA . 2,240 parts In-Stock

1+ parts

-

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2,240

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Flip Electronics

USA . 8 parts In-Stock

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-

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,125 parts In-Stock

1+ parts

$17.510

100+ parts

-

1k+ parts

-

10k+ parts

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1,125

$17.510

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-

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Corphita

USA . 1,533 parts In-Stock

1+ parts

$1,851.552

100+ parts

-

1k+ parts

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1,533

$1,851.552

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Corohmni

South Africa . 461 parts In-Stock

1+ parts

$2,057.280

100+ parts

-

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461

$2,057.280

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SupplyDigital Components

Austria . 5,875 parts In-Stock

1+ parts

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5,875

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Kulean Microsystems

USA . 5,820 parts In-Stock

1+ parts

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5,820

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Problanco Electronics

Mexico . 2,067 parts In-Stock

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2,067

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UHIMA Technologies

Türkiye . 596 parts In-Stock

1+ parts

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596

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TANS Electronics

Latvia . 395 parts In-Stock

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395

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Perfect Parts

USA . 125 parts In-Stock

1+ parts

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125

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Authorized Procurement Solutions

USA . 14 parts In-Stock

1+ parts

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1k+ parts

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14

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Overview

Discover a new world of possibilities with the NOIL1SE3000A-GDC by Onsemi, an innovative image sensor that delivers unparalleled quality and performance. As a leader in the industry, Onsemi ensures top-notch reliability and cutting-edge technology in all their products. Ideal for a wide range of applications, this image sensor offers exceptional value and benefits to customers, providing crystal-clear images and precise data capture. Elevate your projects to the next level with the NOIL1SE3000A-GDC and experience the difference that superior technology can make.

Feature Benefit Bullets

Pixel Size (um): 8X8

The small pixel size allows for high resolution images to be captured, resulting in clear and detailed pictures.

Maximum Supply Voltage: 2.25 V

Low maximum supply voltage helps in reducing power consumption and heat generation, making the product energy efficient.

Master Clock: 206 MHz

High master clock frequency enables fast data processing and high frame rates, making the product suitable for applications requiring quick image capture.

Body Width: 27 inch

Compact body width allows for easy integration into various devices without taking up too much space.

Power Supplies (V): 2.5

Stable power supply voltage ensures reliable and consistent performance of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high sensitivity, making the product efficient and capable of capturing clear images in various lighting conditions.

Body Height: 4.3 mm

Low body height allows for a slim and sleek design of the product, making it suitable for applications where space is limited.

Package Shape or Style: RECTANGULAR

Rectangular package shape provides easy mounting and alignment of the image sensor in devices, simplifying the integration process.

Minimum Supply Voltage: 2.75 V

The minimum supply voltage ensures stable operation of the image sensor under varying voltage conditions, enhancing reliability.

Maximum Operating Temperature: 60 °C

High maximum operating temperature allows for the image sensor to be used in a wide range of environments without the risk of overheating.

Horizontal Pixel: 1696

High horizontal pixel count results in wide and detailed images, suitable for applications requiring high-resolution image capture.

Output Type: DIGITAL OUTPUT

Digital output simplifies data transmission and processing, making the product compatible with digital systems and devices.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures the image sensor can function in cold environments without performance degradation.

Terminal Finish: Matte Tin (Sn)

Matte tin terminal finish provides good solderability, ensuring secure and reliable connections for the image sensor.

Maximum Operating Current: 0.02 mA

Low maximum operating current contributes to the energy efficiency of the product, prolonging battery life in portable devices.

Housing: CERAMIC

Ceramic housing offers durability and protection to the image sensor, making it suitable for rugged environments.

Dynamic Range: 80 dB

High dynamic range allows the image sensor to capture both bright and dark areas in a scene accurately, resulting in well-balanced and natural-looking images.

Vertical Pixel: 1710

High vertical pixel count enhances the image sensor's ability to capture detailed and high-resolution images with good vertical coverage.

Body Length/Diameter: 31 mm

The compact body length/diameter ratio allows for easy integration and placement of the image sensor in various devices.

Optical Format (inch): 1.2

The optical format of 1.2 inches provides a good compromise between sensor size and image quality, making the product versatile for different applications.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections for the image sensor, preventing signal loss or interference.

Frame Rate: 485 fps

High frame rate allows for capturing fast-moving objects and scenes with smooth and clear motion, making the product suitable for applications requiring high-speed image capture.

Array Type: FRAME

Frame array type provides efficient and organized pixel arrangement, enabling the image sensor to capture detailed and structured images.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the installation process of the image sensor in devices, reducing assembly time and effort.

Technical Specifications

Image Sensors NOIL1SE3000A-GDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

27 inch

Body Height:

4.3 mm

Body Length/Diameter:

31 mm

Dynamic Range:

80 dB

Frame Rate:

485 fps

Horizontal Pixel:

1696

Housing:

CERAMIC

JESD-609 Code:

e3

Master Clock:

206 MHz

Mounting Feature:

Maximum Operating Current:

.02 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1.2

Output Type:

Package Shape or Style:

Pixel Size (um):

8X8

Power Supplies (V):

2.5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2.25 V

Minimum Supply Voltage:

2.75 V

Terminal Finish:

Matte Tin (Sn)

Termination Type:

SOLDER

Vertical Pixel:

1710

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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