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NOIL1SN3000A-GDC

Onsemi

NOIL1SN3000A-GDC by Onsemi

NOIL1SN3000A-GDC by Onsemi is an 8x8 um CMOS image sensor with a max supply voltage of 2.25V and master clock at 206 MHz. Ideal for applications requiring high-speed digital output, it offers a frame rate of 485 fps, dynamic range of 80 dB, and operates b/w temperatures of 0-60 °C.

Median Price

$1,637.100

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 15 parts In-Stock

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$1,637.100

100+ parts

$1,538.870

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$1,440.650

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15

$1,637.100

$1,538.870

$1,440.650

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Distributors (In-Stock)

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Digiode

USA . 999 parts In-Stock

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$1,810.348

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Vyrian

USA . 2,543 parts In-Stock

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Chip Stock

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Flip Electronics

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AZTECH Wire

Italy . 138 parts In-Stock

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$20.140

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Corphita

USA . 1,801 parts In-Stock

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$1,715.067

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Corohmni

South Africa . 179 parts In-Stock

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$1,905.630

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SupplyDigital Components

Austria . 7,822 parts In-Stock

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Kulean Microsystems

USA . 6,497 parts In-Stock

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TANS Electronics

Latvia . 5,369 parts In-Stock

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Problanco Electronics

Mexico . 1,226 parts In-Stock

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UHIMA Technologies

Türkiye . 691 parts In-Stock

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Overview

Experience unparalleled image quality and performance with the NOIL1SN3000A-GDC by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Image Sensors that are ideal for a wide range of applications. From surveillance systems to automotive cameras, this product offers exceptional value and benefits to customers looking for reliability and precision. Trust Onsemi to provide you with the superior technology you need for your next project.

Feature Benefit Bullets

Pixel Size (um): 8X8

Smaller pixel size allows for higher resolution images to be captured.

Maximum Supply Voltage: 2.25 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 206 MHz

High master clock frequency enables fast image capture and processing.

Body Width: 27 inch

Compact body width makes it suitable for space-constrained applications.

Power Supplies (V): 2.5

Stable power supply voltage ensures consistent performance of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology provides high-quality images with low power consumption.

Body Height: 4.3 mm

Low body height enables integration into slim devices or applications.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into electronic devices.

Minimum Supply Voltage: 2.75 V

Minimum supply voltage ensures reliable operation even under low power conditions.

Maximum Operating Temperature: 60 °C

Wide operating temperature range makes it suitable for diverse environmental conditions.

Horizontal Pixel: 1696

High horizontal pixel count provides detailed images with sharp resolution.

Output Type: DIGITAL OUTPUT

Digital output simplifies data transfer and processing for end users.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance.

Maximum Operating Current: 0.02 mA

Low operating current helps in reducing power consumption and extending battery life.

Housing: CERAMIC

Ceramic housing offers durability and protection to the image sensor.

Dynamic Range: 80 dB

Wide dynamic range allows for capturing both bright and dark areas in the same image.

Vertical Pixel: 1710

High vertical pixel count enhances the image quality and detail in vertical direction.

Body Length/Diameter: 31 mm

Compact body length facilitates easy integration into various devices or systems.

Optical Format (inch): 1.2

The optical format of 1.2 inches provides compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

Solder termination allows for reliable electrical connections and ease of assembly.

Frame Rate: 485 fps

High frame rate enables capturing fast-moving objects or dynamic scenes with clarity.

Array Type: FRAME

Frame array type simplifies image capture and processing in a systematic manner.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure attachment to PCBs or other surfaces.

Technical Specifications

Image Sensors NOIL1SN3000A-GDC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

27 inch

Body Height:

4.3 mm

Body Length/Diameter:

31 mm

Dynamic Range:

80 dB

Frame Rate:

485 fps

Horizontal Pixel:

1696

Housing:

CERAMIC

JESD-609 Code:

e3

Master Clock:

206 MHz

Mounting Feature:

Maximum Operating Current:

.02 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

0 Cel

Optical Format (inch):

1.2

Output Type:

Package Shape or Style:

Pixel Size (um):

8X8

Power Supplies (V):

2.5

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

2.25 V

Minimum Supply Voltage:

2.75 V

Terminal Finish:

MATTE TIN

Termination Type:

SOLDER

Vertical Pixel:

1710

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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