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MT9P031I12STM-DR1

Onsemi

MT9P031I12STM-DR1 by Onsemi

The Onsemi MT9P031I12STM-DR1 is a CMOS image sensor with 2592x1944 pixels, offering a pixel size of 2.2x2.2 um and a dynamic range of 70.1 dB. It operates at a max supply voltage of 1.9V and is suitable for applications requiring high-resolution imaging at frame rates up to 14 fps.

Median Price

$22.483

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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$22.483

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870

$22.483

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Vyrian

USA . 4,595 parts In-Stock

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Digiode

USA . 2,358 parts In-Stock

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Flip Electronics

USA . 240 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$2.114

100+ parts

$2.093

1k+ parts

$2.008

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50

$2.114

$2.093

$2.008

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Aztec Data Supply Inc.

USA . 318 parts In-Stock

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$3.040

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318

$3.040

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Ampacity Inc.

Singapore . 239 parts In-Stock

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$11.870

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239

$11.870

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Semicontronic

India . 228 parts In-Stock

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$11.870

100+ parts

$11.573

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$11.514

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$11.870

$11.573

$11.514

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Corohmni

South Africa . 98 parts In-Stock

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$13.970

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AZTECH Wire

Italy . 699 parts In-Stock

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$15.803

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699

$15.803

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Netroflash

USA . 2,000 parts In-Stock

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$22.483

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$22.033

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$22.483

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Continental Prestige Electronics

USA . 1,628 parts In-Stock

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$22.483

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$22.033

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Kulean Microsystems

USA . 6,928 parts In-Stock

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TANS Electronics

Latvia . 5,641 parts In-Stock

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SupplyDigital Components

Austria . 5,283 parts In-Stock

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Perfect Parts

USA . 4,570 parts In-Stock

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Problanco Electronics

Mexico . 4,429 parts In-Stock

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Argo Parts USA

USA . 2,009 parts In-Stock

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Corphita

USA . 276 parts In-Stock

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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Overview

Capture stunning images with the Onsemi MT9P031I12STM-DR1 Image Sensor. Known for its reliable quality and advanced technology, Onsemi is a trusted manufacturer in the industry. This sensor is perfect for a wide range of applications, offering customers unparalleled value and benefits. Whether you're into photography, security systems, or automotive cameras, this sensor delivers exceptional performance and clarity. Upgrade your imaging experience with Onsemi's MT9P031I12STM-DR1 and see the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage for energy efficiency and battery-powered applications.

Master Clock: 96 MHz

High master clock frequency enables fast data processing and image capture.

Body Width: 10 inch

Compact body width for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology for low power consumption and high sensitivity.

Output Range: 0.35-2.30V

Wide output range for capturing detailed image data with high dynamic range.

Maximum Operating Temperature: 70 °C

High maximum operating temperature for versatile usage in different environments.

Frame Rate: 14 fps

Decent frame rate for capturing smooth video footage with minimal motion blur.

Sensitivity (V/lx.s): 1.4 V/lx.s

High sensitivity for capturing clear images in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mountable for easy and secure installation on PCBs or other surfaces.

Technical Specifications

Image Sensors MT9P031I12STM-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

1.4 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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