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MT9P031I12STC-DR1

Onsemi

MT9P031I12STC-DR1 by Onsemi

The Onsemi MT9P031I12STC-DR1 image sensor features a pixel size of 2.2x2.2 um, 96 MHz master clock, and 70.1 dB dynamic range. Ideal for applications requiring high-resolution imaging with a frame rate of 14 fps in a compact square package measuring 10mm x 10mm x 1.25mm.

Median Price

$27.470

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 185 parts In-Stock

1+ parts

$21.630

100+ parts

$20.330

1k+ parts

$18.380

10k+ parts

-

185

$21.630

$20.330

$18.380

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DigiKey

USA . 160 parts In-Stock

1+ parts

-

100+ parts

$33.310

1k+ parts

$33.310

10k+ parts

$33.310

160

-

$33.310

$33.310

$33.310

Flip Electronics (Authorized)

USA . 160 parts In-Stock

1+ parts

-

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160

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Distributors (In-Stock)

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Digiode

USA . 1,673 parts In-Stock

1+ parts

$20.548

100+ parts

-

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1,673

$20.548

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-

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Nova Conductors

Japan . 49 parts In-Stock

1+ parts

$32.777

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-

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49

$32.777

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Vyrian

USA . 7,691 parts In-Stock

1+ parts

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7,691

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Flip Electronics

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 197 parts In-Stock

1+ parts

$2.497

100+ parts

-

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197

$2.497

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AZTECH Wire

Italy . 350 parts In-Stock

1+ parts

$14.397

100+ parts

-

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350

$14.397

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Semicontronic

India . 168 parts In-Stock

1+ parts

$18.390

100+ parts

$17.930

1k+ parts

$17.838

10k+ parts

-

168

$18.390

$17.930

$17.838

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Ampacity Inc.

Singapore . 64 parts In-Stock

1+ parts

$18.390

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64

$18.390

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Corphita

USA . 1,713 parts In-Stock

1+ parts

$19.467

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1,713

$19.467

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Continental Prestige Electronics

USA . 1,185 parts In-Stock

1+ parts

$20.836

100+ parts

-

1k+ parts

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10k+ parts

$20.419

1,185

$20.836

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$20.419

Corohmni

South Africa . 292 parts In-Stock

1+ parts

$21.630

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292

$21.630

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$32.121

100+ parts

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$30.836

10k+ parts

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50

$32.121

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$30.836

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 4,434 parts In-Stock

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4,434

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TANS Electronics

Latvia . 4,237 parts In-Stock

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4,237

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Argo Parts USA

USA . 3,142 parts In-Stock

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SupplyDigital Components

Austria . 1,509 parts In-Stock

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1,509

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Problanco Electronics

Mexico . 1,177 parts In-Stock

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1,177

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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26

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Overview

Capture life's precious moments with the MT9P031I12STC-DR1 image sensor by Onsemi. Known for their cutting-edge technology and superior quality, Onsemi delivers top-of-the-line image sensors that provide clear and crisp images for a variety of applications. Whether you're capturing unforgettable memories or enhancing your security system, this image sensor offers unparalleled value, benefits, and advantages to customers. Trust Onsemi to bring your vision to life with the MT9P031I12STC-DR1.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for high resolution images and detailed captured information.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 96 MHz

High master clock frequency enables fast processing and data transfer speeds.

Body Width: 10 inch

Compact body width makes it suitable for integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors offer low power consumption and high image quality, making it a reliable choice for imaging applications.

Body Height: 1.25 mm

Thin body height allows for easy integration and compact design of the overall system.

Package Shape or Style: SQUARE

Square package shape provides uniformity and ease of mounting in electronic devices.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures reliable operation in a wide range of power conditions.

Maximum Operating Temperature: 70 °C

High maximum operating temperature tolerance ensures durability and performance in various environmental conditions.

Horizontal Pixel: 2592

High horizontal pixel count results in detailed and high-resolution images.

Output Range: 0.60-2.30V

Wide output voltage range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital output voltage simplifies integration with digital systems and processors.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature support ensures reliable operation even in extreme cold conditions.

Maximum Operating Current: 35 mA

Low operating current consumption helps in reducing power consumption and extending battery life in portable devices.

Dynamic Range: 70.1 dB

High dynamic range allows capturing a wide range of light intensities in a single image, ensuring good exposure control.

Vertical Pixel: 1944

High vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 10 mm

Compact body length/diameter facilitates easy installation in space-constrained applications.

Optical Format (inch): 1/2.5

Standard optical format compatibility ensures interoperability with existing lens and imaging systems.

Termination Type: SOLDER

Solder termination provides a reliable connection and easy installation during assembly.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication and control with external systems or processors.

Frame Rate: 14 fps

Decent frame rate allows for smooth video recording and capture of fast-moving scenes.

Array Type: FRAME

Frame array construction enables precise pixel placement and optimized sensor performance.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies PCB assembly and reduces overall system size.

Technical Specifications

Image Sensors MT9P031I12STC-DR1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL RESET RELEASE, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.6-3.1V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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