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KAF-0261-AAA-CD-AE

Onsemi

KAF-0261-AAA-CD-AE by Onsemi

The Onsemi KAF-0261-AAA-CD-AE is a CCD image sensor with 512x512 pixels, 20x20 um pixel size, and 87 dB dynamic range. It operates b/w -70 to 50 °C, suitable for full-frame imaging applications. With a spectral response of 400-1000 nm, it offers high-quality image capture at data rates up to 5 Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,240 parts In-Stock

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Digiode

USA . 1,920 parts In-Stock

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1,920

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Distributors (Availability)

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TANS Electronics

Latvia . 8,306 parts In-Stock

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Problanco Electronics

Mexico . 6,111 parts In-Stock

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Kulean Microsystems

USA . 3,878 parts In-Stock

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SupplyDigital Components

Austria . 2,122 parts In-Stock

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Corphita

USA . 1,636 parts In-Stock

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1,636

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Capture stunning images with the KAF-0261-AAA-CD-AE by Onsemi, a top-of-the-line image sensor that guarantees high-quality results every time. Manufactured by the trusted brand Onsemi, this CCD image sensor is perfect for applications in photography, surveillance, and scientific imaging. With its exceptional dynamic range and impressive spectral response, this sensor offers unparalleled value and benefits to customers looking to take their projects to the next level. Upgrade your imaging capabilities with the KAF-0261-AAA-CD-AE and experience the difference for yourself.

Feature Benefit Bullets

Pixel Size (um) 20X20

The small pixel size allows for detailed image capture with high resolution, making this product ideal for applications requiring clear and precise images.

Maximum Supply Voltage 17.5 V

Having a high maximum supply voltage provides flexibility in power requirements and allows for stable operation even under varying voltage conditions.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image output and low noise levels, making them a reliable choice for capturing accurate and high-resolution images.

Package Shape or Style RECTANGULAR

The rectangular package shape allows for easy integration into various devices and systems, providing flexibility in design and installation.

Minimum Supply Voltage 15 V

With a relatively low minimum supply voltage, this product ensures efficient power consumption and can operate even in low-power conditions.

Maximum Operating Temperature 50 °C

The high maximum operating temperature range ensures reliable performance even in harsh environments with elevated temperatures, making this product suitable for a wide range of applications.

Minimum Operating Temperature -70 °C

With a low minimum operating temperature, this product can withstand extreme cold conditions, providing versatility for applications in various climates and environments.

Housing CERAMIC

The ceramic housing offers durability and thermal stability, protecting the internal components and ensuring reliable performance in rugged conditions.

Dynamic Range 87 dB

The high dynamic range allows for capturing a wide range of light intensities accurately, resulting in clear and well-exposed images with details in both bright and dark areas.

Vertical Pixel 512

The high vertical pixel count provides ample resolution for capturing detailed images with good vertical clarity, making this product suitable for applications that require precise image reproduction.

Spectral Response (nm) 400-1000

The broad spectral response range ensures that this image sensor can capture a wide range of wavelengths, making it versatile for various imaging applications across different industries.

Data Rate 5 Mbps

The high data rate allows for quick and efficient transfer of image data, enabling real-time imaging and fast processing for applications that require rapid image capture and analysis.

Termination Type SOLDER

The solder termination type offers a secure and reliable connection, ensuring stable performance and easy installation in electronic devices and systems.

Array Type FULL FRAME

Featuring a full-frame array type, this product offers a large imaging area and high resolution, making it an excellent choice for applications that demand comprehensive image capture without any cropping or loss of details.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature enables secure and stable installation of the image sensor onto circuit boards or other surfaces, ensuring proper alignment and robust mechanical support for reliable operation.

Technical Specifications

Image Sensors KAF-0261-AAA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

5 Mbps

Dynamic Range:

87 dB

Horizontal Pixel:

512

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Package Shape or Style:

Pixel Size (um):

20X20

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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