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KAF-0402-ABA-CD-AE

Onsemi

KAF-0402-ABA-CD-AE by Onsemi

Onsemi's KAF-0402-ABA-CD-AE is a CCD image sensor with 9x9 um pixel size, offering 768H x 512V resolution. It operates at 14.75-15.5 V supply voltage range, providing a dynamic range of 76 dB. Ideal for applications requiring high-quality imaging in full-frame array format with a data rate of 10 Mbps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,271 parts In-Stock

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Vyrian

USA . 1,701 parts In-Stock

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Kulean Microsystems

USA . 8,241 parts In-Stock

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Problanco Electronics

Mexico . 6,663 parts In-Stock

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SupplyDigital Components

Austria . 6,581 parts In-Stock

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TANS Electronics

Latvia . 2,786 parts In-Stock

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Corphita

USA . 1,556 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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Overview

Unlock the power of high-quality imaging with the KAF-0402-ABA-CD-AE by Onsemi. Crafted by a trusted manufacturer, this image sensor offers unmatched performance and reliability for a wide range of applications. From industrial automation to medical imaging, this product delivers exceptional value, providing crisp and clear images with a dynamic range of 76 dB. Experience the benefits of advanced technology and precision engineering with the KAF-0402-ABA-CD-AE for all your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images to be captured, making this image sensor ideal for applications where detail is crucial.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage provides flexibility in power supply options and allows for better performance in varying operating conditions.

Sensors or Transducers Type: IMAGE SENSOR, CCD

CCD sensors are known for their high-quality imaging capabilities, making this image sensor a reliable choice for capturing clear and sharp images.

Package Shape or Style: RECTANGULAR

Rectangular package shape allows for easier integration into various electronic devices and systems, making this image sensor versatile in its applications.

Minimum Supply Voltage: 14.75 V

Having a higher minimum supply voltage ensures stable performance and reliable operation even under low power supply conditions.

Horizontal Pixel: 768

Higher horizontal pixel count allows for wider image capture, making this image sensor suitable for applications that require a larger field of view.

Housing: CERAMIC

Ceramic housing provides durability and heat resistance, ensuring the longevity and reliability of this image sensor even in harsh operating environments.

Dynamic Range: 76 dB

High dynamic range enables the image sensor to capture a wide range of light intensities, resulting in clear and detailed images with accurate color reproduction.

Vertical Pixel: 512

Vertical pixel count determines the resolution of the images captured, and having a higher vertical pixel count ensures sharp and detailed image quality.

Data Rate: 10 Mbps

High data rate allows for fast and efficient transfer of image data, making this image sensor suitable for real-time imaging applications that require quick image processing.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection, ensuring stable performance and easy integration of this image sensor into electronic devices.

Array Type: FULL FRAME

Full-frame array type maximizes the image sensor's field of view, allowing for comprehensive image capture without cropping or distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting feature provides secure mechanical support, making it easier to install and position this image sensor in various electronic devices and systems.

Technical Specifications

Image Sensors KAF-0402-ABA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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