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KAF-0402-AAA-CP-AE

Onsemi

KAF-0402-AAA-CP-AE by Onsemi

The Onsemi KAF-0402-AAA-CP-AE is a CCD image sensor with 9x9 um pixel size, offering 768 horizontal and 512 vertical pixels. It operates at a max supply voltage of 15.5 V and has a dynamic range of 76 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

$2.644

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.644

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100

$2.644

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Vyrian

USA . 1,078 parts In-Stock

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1,078

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Digiode

USA . 359 parts In-Stock

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359

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 5,229 parts In-Stock

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5,229

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TANS Electronics

Latvia . 4,744 parts In-Stock

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4,744

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Kulean Microsystems

USA . 3,154 parts In-Stock

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3,154

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SupplyDigital Components

Austria . 2,450 parts In-Stock

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2,450

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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568

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Corphita

USA . 449 parts In-Stock

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449

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Corohmni

South Africa . 132 parts In-Stock

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132

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Overview

Revolutionize your imaging experience with the KAF-0402-AAA-CP-AE by Onsemi. Crafted with precision and expertise, this image sensor guarantees unparalleled quality and performance. Perfect for a wide range of applications, from professional photography to medical imaging, this product offers exceptional value and benefits. Capture every detail with clarity and precision, thanks to its advanced technology and innovative design. Upgrade your imaging solutions today with Onsemi's top-of-the-line image sensor.

Feature Benefit Bullets

Pixel Size (um): 9X9

With a small pixel size, this image sensor can capture detailed images with high resolution, making it suitable for applications requiring sharp clarity.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage allows for versatile usage scenarios and compatibility with different power sources, providing flexibility in system integration.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, it offers high-quality image capture with low noise, making it ideal for applications where image clarity is crucial.

Package Shape or Style: RECTANGULAR

The rectangular package shape enables easy integration into various devices and systems, enhancing the overall design and functionality of the product.

Minimum Supply Voltage: 14.75 V

With a relatively low minimum supply voltage, this image sensor can operate efficiently while consuming less power, leading to energy savings in the long run.

Horizontal Pixel: 768

The high number of horizontal pixels allows for capturing wide-angle images with detailed precision, making it suitable for panoramic photography or surveillance applications.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability, ensuring reliable performance in diverse environmental conditions and extending the lifespan of the product.

Dynamic Range: 76 dB

With a high dynamic range, this image sensor can accurately capture both bright and dark areas in a scene, resulting in balanced and realistic images with excellent contrast.

Vertical Pixel: 512

The vertical pixel count allows for capturing detailed images in a portrait orientation, making it suitable for applications that require precise vertical resolution, such as facial recognition systems.

Data Rate: 10 Mbps

The high data rate enables fast and efficient transfer of image data, ensuring smooth real-time image processing and reducing latency in applications that demand quick response times.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, preventing signal loss or interruption during operation, thereby enhancing the overall performance and longevity of the product.

Array Type: FULL FRAME

Being a full-frame array, this image sensor can capture the entire scene in a single shot without cropping, making it ideal for applications where maximizing the field of view is essential, such as in astrophotography or aerial imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides mechanical stability, ensuring secure placement of the image sensor in various devices or systems, enhancing reliability and performance.

Technical Specifications

Image Sensors KAF-0402-AAA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

10 Mbps

Dynamic Range:

76 dB

Horizontal Pixel:

768

Housing:

CERAMIC

Mounting Feature:

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.75 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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