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MT9V024IA7XTR-DR

Onsemi

MT9V024IA7XTR-DR by Onsemi

Onsemi's MT9V024IA7XTR-DR is a 1/3 inch CMOS image sensor with 752x480 pixels, offering a dynamic range of 100 dB. Operating at temperatures from -40 to 105 °C, it has a digital voltage output interface and supports a frame rate of 60 fps. Ideal for applications requiring high-quality imaging in compact devices.

Median Price

$31.490

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,770 parts In-Stock

1+ parts

$31.490

100+ parts

$30.860

1k+ parts

$30.230

10k+ parts

-

3,770

$31.490

$30.860

$30.230

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,914 parts In-Stock

1+ parts

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8,914

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Digiode

USA . 2,154 parts In-Stock

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2,154

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,294 parts In-Stock

1+ parts

$12.750

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1,294

$12.750

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AZTECH Wire

Italy . 46 parts In-Stock

1+ parts

$20.280

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46

$20.280

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Problanco Electronics

Mexico . 8,198 parts In-Stock

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Argo Parts USA

USA . 5,926 parts In-Stock

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5,926

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SupplyDigital Components

Austria . 4,815 parts In-Stock

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4,815

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TANS Electronics

Latvia . 3,851 parts In-Stock

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3,851

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Continental Prestige Electronics

USA . 2,469 parts In-Stock

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2,469

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Kulean Microsystems

USA . 2,419 parts In-Stock

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2,419

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Perfect Parts

USA . 1,413 parts In-Stock

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1,413

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Corphita

USA . 1,245 parts In-Stock

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1,245

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Netroflash

USA . 500 parts In-Stock

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500

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Corohmni

South Africa . 172 parts In-Stock

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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124

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Overview

Experience crystal-clear image quality like never before with the MT9V024IA7XTR-DR by Onsemi. As a leader in the industry, Onsemi ensures top-notch manufacturing quality and reliability in their products, making them a trusted choice for professionals worldwide. Ideal for a wide range of applications, this high-performance image sensor offers exceptional value and benefits, delivering unparalleled results to customers. Upgrade your imaging solutions today with the MT9V024IA7XTR-DR and witness the difference for yourself.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution imaging, making this image sensor ideal for capturing detailed images.

Maximum Supply Voltage: 3.6 V

With a higher maximum supply voltage, this image sensor can operate efficiently and reliably, ensuring stable performance.

Master Clock: 27 MHz

The high master clock frequency enables fast data processing and image capture, making this image sensor suitable for applications requiring quick image acquisition.

Body Width: 9 inch

The compact body width of 9 inches allows for easy integration into various devices and systems, making this image sensor versatile for different applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and noise immunity, making it a reliable choice for imaging applications.

Body Height: 1.3 mm

The slim body height of 1.3 mm enables this image sensor to be used in space-constrained environments without compromising on performance or functionality.

Package Shape or Style: SQUARE

The square package shape provides a compact form factor and easy mounting options, making this image sensor convenient for integration into different systems.

Minimum Supply Voltage: 3 V

The low minimum supply voltage ensures energy efficiency and extends the operating life of this image sensor, making it a cost-effective choice for long-term use.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, this image sensor can withstand harsh environmental conditions, ensuring reliable operation in various applications.

Horizontal Pixel: 752

The high horizontal pixel count of 752 allows for wide image capture, providing detailed and comprehensive image data for analysis and processing.

Output Range: 0.30-3V

The wide output voltage range of 0.30-3V offers flexibility in signal processing and compatibility with different systems, making this image sensor versatile for various applications.

Output Type: DIGITAL VOLTAGE

The digital voltage output type simplifies signal processing and integration with digital systems, ensuring accurate and reliable data transmission for image capture.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this image sensor to function in cold environments, making it suitable for applications in various climates and conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The terminal finish of Tin/Silver/Copper provides good conductivity and corrosion resistance, ensuring stable and robust connections for reliable operation of this image sensor.

Maximum Operating Current: 60 mA

With a maximum operating current of 60 mA, this image sensor consumes low power, making it energy-efficient and cost-effective for long-term use.

Dynamic Range: 100 dB

The high dynamic range of 100 dB allows this image sensor to capture a wide range of light intensities, providing clear and detailed images in both bright and low-light conditions.

Vertical Pixel: 480

The vertical pixel count of 480 complements the horizontal pixel count, ensuring high-resolution image capture with detailed vertical and horizontal information for comprehensive imaging.

Body Length/Diameter: 9 mm

The compact body length/diameter of 9 mm makes this image sensor easy to handle and mount, offering flexibility in installation and integration into different systems.

Optical Format (inch): 1/3

The optical format of 1/3 inch provides compatibility with standard optical systems and lenses, allowing for easy customization and adaptation to specific imaging requirements.

Termination Type: SOLDER

The solder termination type offers secure and reliable connections for the image sensor, ensuring stable signal transmission and operation in various conditions and environments.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface output type simplifies communication and data transfer, making this image sensor easy to integrate into different systems and applications for seamless operation.

Frame Rate: 60 fps

With a high frame rate of 60 frames per second, this image sensor can capture fast-moving subjects and dynamic scenes with smooth and continuous imaging, making it suitable for video and motion tracking applications.

Array Type: FRAME

The frame array type allows for efficient data capture and processing, enabling this image sensor to deliver high-quality images with consistent and reliable performance for various imaging tasks.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies installation and integration of this image sensor onto PCBs and other surfaces, offering flexibility and convenience in system design and assembly.

Technical Specifications

Image Sensors MT9V024IA7XTR-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

100 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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