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KAI-02050-ABA-JD-BA

Onsemi

KAI-02050-ABA-JD-BA by Onsemi

Onsemi's KAI-02050-ABA-JD-BA is a 5.5x5.5 um CCD image sensor with 1684H x 1264V pixels, offering a dynamic range of 64 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and comes in a rectangular package style. Ideal for industrial imaging applications requiring high-resolution and low-light performance.

Median Price

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Lifecycle Status

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Digiode

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Problanco Electronics

Mexico . 7,995 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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TANS Electronics

Latvia . 6,442 parts In-Stock

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Corphita

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Corohmni

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Overview

Capture every moment with crystal-clear precision using the KAI-02050-ABA-JD-BA Image Sensor by Onsemi. As a leader in imaging technology, Onsemi has crafted this sensor to deliver unparalleled quality and reliability. Ideal for applications in surveillance, medical imaging, and industrial inspection, this sensor offers outstanding value with its high dynamic range and precise image capture capabilities. Take your projects to the next level with the superior performance and versatility of the KAI-02050-ABA-JD-BA.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution image capture, making this image sensor suitable for high-quality imaging applications.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage provides flexibility in power supply options and allows for efficient operation of the image sensor.

Body Width: 20.07 inch

The compact body width makes the image sensor suitable for integration into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR, CCD

Being a CCD image sensor, it offers high-quality imaging with low noise, making it a reliable choice for applications where image quality is crucial.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy installation and integration into electronic devices or systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures efficient power consumption, making this image sensor a cost-effective choice for long-term use.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows for use in various environments and ensures reliable performance under different conditions.

Horizontal Pixel: 1684

With a high number of horizontal pixels, this image sensor can capture detailed and sharp images, making it suitable for professional imaging applications.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature makes this image sensor suitable for use in extreme cold environments without compromising performance.

Dynamic Range: 64 dB

The high dynamic range allows this image sensor to capture a wide range of light intensities accurately, resulting in high-quality and true-to-life images.

Vertical Pixel: 1264

With a high number of vertical pixels, this image sensor can capture detailed images with clarity and precision, making it ideal for various imaging applications.

Body Length/Diameter: 33.02 mm

The compact body length/diameter ensures easy integration and installation in devices or systems where space is limited.

Optical Format (inch): 2/3

The 2/3 inch optical format provides a good balance between image quality and sensor size, making this image sensor versatile for different imaging needs.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, enhancing the durability and longevity of the image sensor.

Array Type: INTERLINE

The interline array type offers fast readout speeds and efficient image transfer, making this image sensor suitable for real-time imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature simplifies the installation process and provides a secure and stable mounting solution for the image sensor.

Technical Specifications

Image Sensors KAI-02050-ABA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1684

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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