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MT9V125IA7XTC-TP

Onsemi

MT9V125IA7XTC-TP by Onsemi

Onsemi's MT9V125IA7XTC-TP is a 5.60x5.60 um CMOS image sensor with 640x480 resolution, 71.7 dB dynamic range, and 30 fps frame rate. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its compact square package and wide operating temperature range of -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 865 parts In-Stock

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Digiode

USA . 473 parts In-Stock

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Kulean Microsystems

USA . 7,646 parts In-Stock

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SupplyDigital Components

Austria . 6,201 parts In-Stock

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Problanco Electronics

Mexico . 4,835 parts In-Stock

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TANS Electronics

Latvia . 1,828 parts In-Stock

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Corphita

USA . 1,035 parts In-Stock

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Corohmni

South Africa . 415 parts In-Stock

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UHIMA Technologies

Türkiye . 217 parts In-Stock

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Overview

Capture life's precious moments with the MT9V125IA7XTC-TP Image Sensor by Onsemi. Crafted with precision and excellence, this sensor delivers superior image quality and performance. Ideal for a wide range of applications, from security cameras to medical imaging equipment, this cutting-edge technology offers unmatched value and benefits to customers. Trust Onsemi's reputation for innovation and reliability, and experience the advantages that the MT9V125IA7XTC-TP provides in capturing stunning visuals with ease.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 3.1 V

Provides sufficient power for the image sensor to function optimally without risk of overloading.

Master Clock: 27 MHz

A high master clock frequency enables fast data processing and efficient image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high integration capabilities, making this product energy-efficient and versatile.

Minimum Operating Temperature: -40 °C

Can operate in very low temperatures, making it suitable for various environments and applications.

Frame Rate: 30 fps

Provides smooth and consistent video recording or streaming capabilities.

Technical Specifications

Image Sensors MT9V125IA7XTC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.50-3.10 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.7 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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