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NOIV1SN1300A-XXC

Onsemi

NOIV1SN1300A-XXC by Onsemi

NOIV1SN1300A-XXC by Onsemi is a 1280x1024 CMOS image sensor with 4.80um pixel size and 62 MHz master clock. It operates b/w -40 to 85 °C, offering a dynamic range of 53 dB. Ideal for frame array applications in various industries due to its square package shape and 1/2 inch optical format.

Median Price

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Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 979 parts In-Stock

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Problanco Electronics

Mexico . 7,207 parts In-Stock

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TANS Electronics

Latvia . 6,530 parts In-Stock

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SupplyDigital Components

Austria . 2,225 parts In-Stock

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Corphita

USA . 680 parts In-Stock

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Kulean Microsystems

USA . 276 parts In-Stock

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Corohmni

South Africa . 102 parts In-Stock

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Overview

Capture every moment with the NOIV1SN1300A-XXC image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-quality products that guarantee exceptional performance and reliability. This image sensor is perfect for a wide range of applications, from surveillance cameras to medical imaging devices. With its high resolution and advanced features, the NOIV1SN1300A-XXC offers unparalleled value and benefits to customers looking for cutting-edge technology at an affordable price. Upgrade your projects today with Onsemi's superior image sensor.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

The small pixel size allows for detailed and high-resolution images to be captured, making this sensor ideal for applications requiring sharp image quality.

Master Clock: 62 MHz

The high master clock frequency enables fast data readout and processing, resulting in quick and efficient image capture and transfer.

Body Width: 10.617 inch

The compact body width makes the sensor suitable for integration into various devices and equipment without taking up much space.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption, high sensitivity, and fast readout speeds, making them a versatile and reliable choice for imaging applications.

Package Shape or Style: SQUARE

The square package shape provides a symmetrical and efficient design, allowing for easy integration and mounting within electronic systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the sensor can withstand extended use in various environmental conditions without overheating or malfunctioning.

Horizontal Pixel: 1280

The high horizontal pixel count enables capturing wide and detailed images, making this sensor suitable for applications requiring a large field of view.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the sensor to function in cold environments without performance degradation, ensuring reliable operation in a wide range of conditions.

Dynamic Range: 53 dB

The high dynamic range provides a wide range of tonal values in captured images, allowing for accurate representation of both low and high-light scenes.

Vertical Pixel: 1024

The vertical pixel count contributes to the overall image resolution and quality, enabling precise and detailed image capture for various applications.

Body Length/Diameter: 10.617 mm

The small body length or diameter makes the sensor compact and easy to integrate into space-constrained devices or systems.

Optical Format (inch): 1/2

The optical format of 1/2 inch provides a good balance between sensor size and image quality, making this sensor suitable for a wide range of imaging applications.

Output Interface Type: 4-WIRE INTERFACE

The 4-wire interface allows for fast and efficient data transfer between the sensor and external devices, facilitating seamless integration and communication in imaging systems.

Array Type: FRAME

The frame array type organizes the sensor pixels in a structured grid pattern, enabling efficient image capture and processing for various imaging tasks.

Technical Specifications

Image Sensors NOIV1SN1300A-XXC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

10.617 inch

Body Length/Diameter:

10.617 mm

Dynamic Range:

53 dB

Horizontal Pixel:

1280

Master Clock:

62 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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